DatasheetsPDF.com

BLF6G38S-25 Dataheets PDF



Part Number BLF6G38S-25
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description WiMAX power LDMOS transistor
Datasheet BLF6G38S-25 DatasheetBLF6G38S-25 Datasheet (PDF)

BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 — 23 December 2008 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 3400 to 3600 VDS (V) 28 PL(AV) (W) 4.5 Gp (dB) 15 ηD (%) 24 ACPR885k.

  BLF6G38S-25   BLF6G38S-25



Document
BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 — 23 December 2008 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 3400 to 3600 VDS (V) 28 PL(AV) (W) 4.5 Gp (dB) 15 ηD (%) 24 ACPR885k ACPR1980k (dBc) −45[2] (dBc) −61[2] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. Measured within 30 kHz bandwidth. 1.2 Features I Typical 1-carrier N-CDMA performance (single carrier IS-95 with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V and an IDq of 225 mA: N Average output power = 4.5 W N Power gain = 15 dB N Drain efficiency = 24 % N ACPR885k = −45 dBc in 30 kHz bandwidth I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (3400 MHz to 3800 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications I RF power amplifiers for base stations and multicarrier applications in the 3400 MHz to 3800 MHz frequency range NXP Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor www.DataSheet4U.com 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Graphic symbol BLF6G38-25 (SOT608A) 1 1 3 2 2 3 sym112 BLF6G38S-25 (SOT608B) 1 2 3 drain gate source [1] 1 3 2 2 1 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLF6G38-25 BLF6G38S-25 Description flanged ceramic package; 2 mounting holes; 2 leads ceramic earless flanged package; 2 leads Version SOT608A SOT608B Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min −0.5 −65 Max 65 +13 8.2 +150 200 Unit V V A °C °C 5. Thermal characteristics Table 5. Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 °C; PL = 25 W Type BLF6G38-25 BLF6G38S-25 Typ 1.8 1.8 Max Unit K/W K/W BLF6G38-25_BLF6G38S-25_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 23 December 2008 2 of 13 NXP Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor www.DataSheet4U.com 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 0.4 mA VDS = 10 V; ID = 40 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = +11 V; VDS = 0 V VDS = 10 V; ID = 1.4 A VGS = VGS(th) + 3.75 V; ID = 1.4 A VGS = 0 V; VDS = 28 V; f = 1 MHz Min 65 1.4 6 Typ 2 8.2 2.8 0.37 0.59 Max 2.4 1.5 150 0.58 Unit V V µA A nA S Ω pF 7. Application information Table 7. Application information Mode of operation: 1-carrier N-CDMA; single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13); PAR = 9.7 dB at 0.01 % probability on the CCDF; channel bandwidth is 1.2288 MHz; f1 = 3400 MHz; f2 = 3500 MHz; f3 = 3600 MHz; RF performance at VDS = 28 V; IDq = 225 mA; Tcase = 25 °C; unless otherwise specified, in a class-AB production circuit. Symbol Gp RLin ηD ACPR885k Parameter power gain input return loss drain efficiency adjacent channel power ratio (885 kHz) Conditions PL(AV) = 4.5 W PL(AV) = 4.5 W PL(AV) = 4.5 W PL(AV) = 4.5 W PL(AV) = 4.5 W [1] [1] Min Typ Max Unit 12.5 15 22 24 dB dB % dBc dBc −10 −45 −40 −61 −56 ACPR1980k adjacent channel power ratio (1980 kHz) [1] Measured within 30 kHz bandwidth. 7.1 Ruggedness in class-AB operation The BLF6G38-25 and BLF6G38S-25 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 225 mA; PL = PL(1dB); f = 3600 MHz. BLF6G38-25_BLF6G38S-25_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 23 December 2008 3 of 13 NXP Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor www.DataSheet4U.com 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 f.


BLF6G38-25 BLF6G38S-25 BLF6G38-50


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)