BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
Rev. 01 — 12 February 2008
www.DataSheet4U.com
Preliminary data ...
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS
transistor
Rev. 01 — 12 February 2008
www.DataSheet4U.com
Preliminary data sheet
1. Product profile
1.1 General description
50 W LDMOS power
transistor for base station applications at frequencies from 3400 MHz to 3800 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[2]
[1] [2] [3]
f (MHz) 3400 to 3600
VDS PL(AV) (V) 28 (W) 9
PL(M)[1] Gp (W) 70 14
ηD 23
ACPR885k ACPR1980k (dBc) −64[3] −49[3]
(dB) (%) (dBc)
PL(M) stands for peak output power. Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz. Measured within 30 kHz bandwidth.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an IDq of 450 mA, a power gain of 14 dB, a drain efficiency of 23 % and a peak output power of 70 W: I Qualified up to a maximum VDS operation of 32 V I Suitable for operation in the 3.4 GHz to 3.8 GHz frequency range I Integrated ESD protection I Excellent ruggedness I...