BLL6H1214-500

BLL6H1214-500 LDMOS L-band radar power transistor Rev. 02 — 1 April 2010 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 150 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 1.2 to 1.4 VDS (V) 50 PL (W) 500 Gp (dB) 17 ηD (%) 50 tr (ns) 20 tf (ns) 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits „ Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 150 mA, a tp of 300 μs with δ of 10 %: ‹ Output power = 500 W ‹ Power gain = 17 dB ‹ Efficiency = 50 % „ Easy power control „ Integrated ESD protection „ High flexibility with respect to pulse formats „ Excellent ruggedness „ High efficiency „ Excellent thermal stability „ Designed for broadband operation (1.2 GHz to 1.4 GHz) „ Internally matched for ease of use „ Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) NXP Semiconductors BLL6H1214-500 www.DataSheet4U.com LDMOS L-band radar power transistor 1.3 Applications „ L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description dr...