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BLM6G22-30G Dataheets PDF



Part Number BLM6G22-30G
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description W-CDMA 2100 MHz to 2200 MHz power MMIC
Datasheet BLM6G22-30G DatasheetBLM6G22-30G Datasheet (PDF)

BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC Rev. 03 — 21 November 2008 www.DataSheet4U.com Preliminary data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead (SOT834-1). Table 1. Typical performance Typical RF performance at Th = 25 °C. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(.

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BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC Rev. 03 — 21 November 2008 www.DataSheet4U.com Preliminary data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead (SOT834-1). Table 1. Typical performance Typical RF performance at Th = 25 °C. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) (W) 2 Gp (dB) 29.5 ηD (%) 9 IMD3 (dBc) −48[1] ACPR (dBc) −50[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 2-carrier W-CDMA performance at a frequency of 2110 MHz: N Average output power = 2 W N Power gain = 30 dB (typ) N Efficiency = 9 % N IMD3 = −48 dBc N ACPR = −50 dBc I Integrated temperature compensated bias I Excellent thermal stability I Biasing of individual stages is externally accessible I Integrated ESD protection I Small component size, very suitable for PA size reduction I On-chip matching (input matched to 50 Ohm, output partially matched) I High power gain I Designed for broadband operation (2100 MHz to 2200 MHz) I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) NXP Semiconductors BLM6G22-30; BLM6G22-30G www.DataSheet4U.com W-CDMA 2100 MHz to 2200 MHz power MMIC 2. Pinning information 2.1 Pinning BLM6G22-30 BLM6G22-30G GND VDS1 n.c. n.c. n.c. RF_INPUT n.c. n.c. VGS1 1 2 3 4 5 6 7 8 9 16 GND 15 n.c. 14 RF_OUTPUT/VDS2 VGS2 10 GND 11 13 n.c. 12 GND 001aae321 Transparent top view. Fig 1. Pin configuration 2.2 Pin description Table 2. Symbol GND VDS1 n.c. RF_INPUT VGS1 VGS2 RF_OUT/VDS2 RF_GND Pin description Pin 1, 11, 12, 16 2 3, 4, 5, 7, 8, 13, 15 6 9 10 14 flange Description ground first stage drain-source voltage not connected RF input first stage gate-source voltage second stage gate-source voltage RF output or second stage drain-source voltage RF ground 3. Ordering information Table 3. Ordering information Package Name BLM6G22-30 BLM6G22-30G HSOP16 Description plastic, heatsink small outline package; 16 leads Version SOT822-1 HSOP16F plastic, heatsink small outline package; 16 leads (flat) SOT834-1 Type number BLM6G22-30_BLM6G22-30G_3 © NXP B.V. 2008. All rights reserved. Preliminary data sheet Rev. 03 — 21 November 2008 2 of 12 NXP Semiconductors BLM6G22-30; BLM6G22-30G www.DataSheet4U.com W-CDMA 2100 MHz to 2200 MHz power MMIC 4. Block diagram VDS1 RF_INPUT VGS1 VGS2 2 6 9 10 TEMPERATURE COMPENSATED BIAS 001aah621 14 RF_OUTPUT/VDS2 Fig 2. Block diagram of BLM6G22-30 and BLM6G22-30G 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID1 ID2 Tstg Tj Parameter drain-source voltage gate-source voltage first stage drain current second stage drain current storage temperature junction temperature Conditions Min 0.5 −65 Max 65 +13 3 9 +150 200 Unit V V A A °C °C 6. Thermal characteristics Table 5. Symbol Rth(j-c)1 Rth(j-c)2 [1] Thermal characteristics Parameter first stage thermal resistance from junction to case Conditions Tcase = 25 °C; PL = 2 W; 2-carrier W-CDMA [1] Value 3.9 2.1 Unit K/W K/W second stage thermal resistance Tcase = 25 °C; PL = 2 W; from junction to case 2-carrier W-CDMA [1] Thermal resistance is determined under specific RF operating conditions. BLM6G22-30_BLM6G22-30G_3 © NXP B.V. 2008. All rights reserved. Preliminary data sheet Rev. 03 — 21 November 2008 3 of 12 NXP Semiconductors BLM6G22-30; BLM6G22-30G www.DataSheet4U.com W-CDMA 2100 MHz to 2200 MHz power MMIC 7. Characteristics Table 6. Characteristics Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz; VDS = 28 V; IDq1 = 270 mA; IDq2 = 280 mA; Th = 25 °C unless otherwise specified; in a production test circuit as described in Section 9 “Test information”. Symbol Gp RLin ηD IMD3 ACPR Parameter power gain input return loss drain efficiency third order intermodulation distortion adjacent channel power ratio Conditions PL(AV) = 2 W PL(AV) = 2 W PL(AV) = 2 W PL(AV) = 2 W PL(AV) = 2 W Min 10 7.5 Typ 14 9 −48 −50 Max 32.5 −44.5 −47 Unit dB dB % dBc dBc 27.5 30 8. Application information 8.1 Ruggedness The BLM6G22-30 and BLM6G22-30G are capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 28 V; IDq1 = 270 mA; IDq2 = 280 mA; PL = 2 W; 2-carrier W-CDMA. 8.2 Impedance information Table 7. f MHz 2075 2085 2095 2105 2115 2125 2135 2145 2155 2165 2175 2185 2195 2205 [1] [2] Typical impedance Zi[1] Ω 40.9 + j22.8 41.2 + j23.2 41.6 + j23.3 41.9 + j23.3 42.1 + j23.


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