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BT169H

NXP Semiconductors

Thyristor

BT169H Thyristor, logic level, high voltage Rev. 01 — 31 March 2008 www.DataSheet4U.com Product data sheet 1. Product...


NXP Semiconductors

BT169H

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BT169H Thyristor, logic level, high voltage Rev. 01 — 31 March 2008 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description Passivated sensitive gate thyristor in a SOT54 plastic package. 1.2 Features I Very sensitive gate I Direct interfacing to logic level ICs I High blocking voltage I Direct interfacing to low power gate drive circuits 1.3 Applications I General purpose switching and phase control I Earth leakage circuit breakers or Ground Fault Circuit Interrupters (GFCI) 1.4 Quick reference data I VRRM, VDRM ≤ 800 V I IT(RMS) ≤ 0.8 A I IT(AV) ≤ 0.5 A I IGT ≤ 100 µA I ITSM ≤ 9 A (t = 10 ms) 2. Pinning information Table 1. Pin 1 2 3 Pinning Description anode (A) gate (G) cathode (K) A G sym037 Simplified outline Graphic symbol K 321 SOT54 (TO-92) NXP Semiconductors BT169H Thyristor, logic level, high voltage www.DataSheet4U.com 3. Ordering information Table 2. Ordering information Package Name BT169H TO-92 Description plastic single-ended leaded (through hole) package; 3 leads Version SOT54 Type number 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDRM VRRM IT(AV) IT(RMS) ITSM Parameter repetitive peak off-state voltage repetitive peak reverse voltage average on-state current RMS on-state current non-repetitive peak on-state current half sine wave; Tlead ≤ 83 °C; see Figure 1 all conduction angles; see Figure 4 and 5 half sine wave; Tj = 25 °C prior to surge; see...




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