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BT258S-800LT Dataheets PDF



Part Number BT258S-800LT
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description SCR logic level
Datasheet BT258S-800LT DatasheetBT258S-800LT Datasheet (PDF)

DPAK BT258S-800LT SCR logic level, high temperature 19 March 2014 Product data sheet 1. General description Passivated sensitive gate Silicon Controlled Rectifier (SCR) in a SOT428 (DPAK) surface mountable plastic package intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. .

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DPAK BT258S-800LT SCR logic level, high temperature 19 March 2014 Product data sheet 1. General description Passivated sensitive gate Silicon Controlled Rectifier (SCR) in a SOT428 (DPAK) surface mountable plastic package intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits • Direct interfacing with low power drivers and microcontrollers • High bidirectional blocking voltage capability • High junction operating temperature capability • High thermal cycling performance • Planar passivated for voltage ruggedness and reliability • Surface mountable package • Very sensitive gate for logic level controls 3. Applications • General purpose switching and phase control • Ignition circuits, CDI for 2- and 3-wheelers • Motor control - e.g. small kitchen appliances • Protection circuits for Switched-Mode Power Supplies (SMPS) • Protection circuits in lighting ballasts 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDRM repetitive peak offstate voltage - - 800 V VRRM repetitive peak reverse voltage - - 800 V ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state current tp = 10 ms; Fig. 4; Fig. 5 - - 75 A Tj junction temperature [1] - - 150 °C IT(RMS) RMS on-state current half sine wave; Tmb ≤ 135 °C; Fig. 2; Fig. 3 - - 8A Scan or click this QR code to view the latest information for this product NXP Semiconductors BT258S-800LT SCR logic level, high temperature Symbol Parameter Conditions Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 8 Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 150 °C; RGK = 100 Ω; (VDM = 67% of VDRM); exponential waveform; Fig. 13 Min Typ Max Unit 20 - 50 µA 35 70 - V/µs [1] Operation above junction temperatures of 110 °C may require the use of a gate to cathode resistor of 1 kΩ or less. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 K cathode mb 2 A anode 3 G gate mb A mounting base; connected to anode 2 13 DPAK (SOT428) Graphic symbol AK G sym037 6. Ordering information Table 3. Ordering information Type number Package Name BT258S-800LT DPAK Description Version plastic single-ended surface-mounted package (DPAK); 3 leads SOT428 (one lead cropped) 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage VRRM repetitive peak reverse voltage IT(AV) average on-state current half sine wave; Tmb ≤ 135 °C; Fig. 1 IT(RMS) RMS on-state current half sine wave; Tmb ≤ 135 °C; Fig. 2; Fig. 3 Min Max Unit - 800 V - 800 V - 5A - 8A BT258S-800LT Product data sheet All information provided in this document is subject to legal disclaimers. 19 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 13 NXP Semiconductors BT258S-800LT SCR logic level, high temperature Symbol ITSM I2t dIT/dt IGM PGM PG(AV) Tstg Tj Parameter Conditions non-repetitive peak on-state current I2t for fusing half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms tp = 10 ms; sine-wave pulse rate of rise of on-state current IT = 10 A; IG = 50 mA; dIG/dt = 50 mA/ µs peak gate current peak gate power average gate power over any 20 ms period storage temperature junction temperature [1] Min Max Unit - 75 A - 82 A - 28 A2s - 50 A/µs - 2A - 5W - 0.5 W -40 150 °C - 150 °C [1] Operation above junction temperatures of 110 °C may require the use of a gate to cathode resistor of 1 kΩ or less. 10 Ptot (W) 8 aaa-008344 a = 1.57 1.9 2.2 6 2.8 4 conduction form 4 angle factor (degrees) a 30 4 2 60 2.8 90 2.2 α 120 1.9 180 1.57 0 0 12 3 45 6 IT(AV)(A) a = Form factor = IT(RMS)/IT(AV) Fig. 1. Total power dissipation as a function of average on-state current; maximum values BT258S-800LT Product data sheet All information provided in this document is subject to legal disclaimers. 19 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 3 / 13 NXP Semiconductors BT258S-800LT SCR logic level, high temperature 10 IT(RMS) (A) 8 aaa-008342 135 °C 25 IT(RMS ) (A) 20 aaa-008343 6 15 4 10 25 Fig. 2. 0 -50 0 50 100 150 Tmb (°C) RMS on-state current as a function of mounting base temperature; maximum values Fig. 3. 010-2 10-1 1 10 surge duration (s) f = 50 Hz; Tmb = 135 °C RMS on-state current as a function of surge duration; maximum values 100 ITSM (A) 80 aaa-008345 60 40 IT ITSM 20 0 1 tp t Tj(init) = 25 °C max 10 102 103 number of cycles f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of.


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