Document
DPAK
BT258S-800LT
SCR logic level, high temperature
19 March 2014
Product data sheet
1. General description
Passivated sensitive gate Silicon Controlled Rectifier (SCR) in a SOT428 (DPAK) surface mountable plastic package intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
2. Features and benefits
• Direct interfacing with low power drivers and microcontrollers • High bidirectional blocking voltage capability • High junction operating temperature capability • High thermal cycling performance • Planar passivated for voltage ruggedness and reliability • Surface mountable package • Very sensitive gate for logic level controls
3. Applications
• General purpose switching and phase control • Ignition circuits, CDI for 2- and 3-wheelers • Motor control - e.g. small kitchen appliances • Protection circuits for Switched-Mode Power Supplies (SMPS) • Protection circuits in lighting ballasts
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDRM
repetitive peak offstate voltage
- - 800 V
VRRM
repetitive peak reverse voltage
- - 800 V
ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C;
state current
tp = 10 ms; Fig. 4; Fig. 5
- - 75 A
Tj junction temperature
[1] - - 150 °C
IT(RMS)
RMS on-state current half sine wave; Tmb ≤ 135 °C; Fig. 2; Fig. 3
- - 8A
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NXP Semiconductors
BT258S-800LT
SCR logic level, high temperature
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 8
Dynamic characteristics
dVD/dt
rate of rise of off-state voltage
VDM = 536 V; Tj = 150 °C; RGK = 100 Ω; (VDM = 67% of VDRM); exponential waveform; Fig. 13
Min Typ Max Unit
20 -
50 µA
35 70 -
V/µs
[1] Operation above junction temperatures of 110 °C may require the use of a gate to cathode resistor of 1 kΩ or less.
5. Pinning information
Table 2. Pinning information Pin Symbol Description
Simplified outline
1 K cathode
mb
2 A anode
3 G gate
mb A
mounting base; connected to anode
2 13
DPAK (SOT428)
Graphic symbol
AK G
sym037
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BT258S-800LT
DPAK
Description
Version
plastic single-ended surface-mounted package (DPAK); 3 leads SOT428 (one lead cropped)
7. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
VRRM
repetitive peak reverse voltage
IT(AV)
average on-state current
half sine wave; Tmb ≤ 135 °C; Fig. 1
IT(RMS)
RMS on-state current
half sine wave; Tmb ≤ 135 °C; Fig. 2; Fig. 3
Min Max Unit - 800 V - 800 V - 5A - 8A
BT258S-800LT
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
2 / 13
NXP Semiconductors
BT258S-800LT
SCR logic level, high temperature
Symbol ITSM
I2t dIT/dt
IGM PGM PG(AV) Tstg Tj
Parameter
Conditions
non-repetitive peak on-state current
I2t for fusing
half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms
tp = 10 ms; sine-wave pulse
rate of rise of on-state current IT = 10 A; IG = 50 mA; dIG/dt = 50 mA/ µs
peak gate current
peak gate power
average gate power
over any 20 ms period
storage temperature
junction temperature
[1]
Min Max Unit - 75 A
- 82 A
- 28 A2s - 50 A/µs
- 2A - 5W - 0.5 W -40 150 °C - 150 °C
[1] Operation above junction temperatures of 110 °C may require the use of a gate to cathode resistor of 1 kΩ or less.
10
Ptot (W)
8
aaa-008344
a = 1.57 1.9
2.2 6 2.8
4 conduction form
4 angle factor (degrees) a
30 4
2
60 2.8 90 2.2
α
120 1.9
180 1.57
0 0 12 3 45 6 IT(AV)(A)
a = Form factor = IT(RMS)/IT(AV)
Fig. 1. Total power dissipation as a function of average on-state current; maximum values
BT258S-800LT
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
3 / 13
NXP Semiconductors
BT258S-800LT
SCR logic level, high temperature
10
IT(RMS) (A) 8
aaa-008342
135 °C
25
IT(RMS ) (A) 20
aaa-008343
6 15
4 10
25
Fig. 2.
0 -50 0 50 100 150
Tmb (°C)
RMS on-state current as a function of mounting
base temperature; maximum values
Fig. 3.
010-2
10-1
1 10 surge duration (s)
f = 50 Hz; Tmb = 135 °C
RMS on-state current as a function of surge duration; maximum values
100 ITSM (A)
80
aaa-008345
60
40 IT ITSM
20 0 1
tp t Tj(init) = 25 °C max
10 102 103 number of cycles
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of.