BUK75/76/7E04-40A
TrenchMOS™ standard level FET
Rev. 02 — 7 November 2001
www.DataSheet4U.com
Product data
1. Descrip...
BUK75/76/7E04-40A
TrenchMOS™ standard level FET
Rev. 02 — 7 November 2001
www.DataSheet4U.com
Product data
1. Description
N-channel enhancement mode field-effect power
transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7504-40A in SOT78 (TO-220AB); BUK7604-40A in SOT404 (D2-PAK); BUK7E04-40A in SOT226 (I2-PAK).
2. Features
s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Standard level compatible.
3. Applications
s Automotive and general purpose power switching: x 12 V loads x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT78, SOT404, SOT226 simplified outline and symbol Description gate (g)
mb mb
Simplified outline
mb
Symbol
d
drain (d) source (s) mounting base, connected to drain (d)
1
MBK106
g s
MBB076
2 3
MBK116
1 2 3
1 2 3
MBK112
SOT78 (TO-220AB)
SOT404 (D2-PAK)
SOT226
(I2-PAK)
Philips Semiconductors
BUK75/76/7E04-40A
TrenchMOS™ standard level FET
www.DataSheet4U.com
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 10 V Tmb = 25 °C VGS = 10 V; ID = 25 A Tj = 25 °C Tj = 175 °C 3.9 − 4.5 8.5 mΩ mΩ
[1]
Symbol Parameter drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance
Typ − − − −
Max 40 198 300 175
Unit V A W °C
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating ...