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IXGX32N170AH1 Dataheets PDF



Part Number IXGX32N170AH1
Manufacturers IXYS
Logo IXYS
Description High-Voltage IGBT
Datasheet IXGX32N170AH1 DatasheetIXGX32N170AH1 Datasheet (PDF)

High Voltage IGBT with Diode IXGX 32N170AH1 VCES IC25 V CE(sat) tfi(typ) = 1700 V = 32 A = 5.0 V = 50 ns Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V 1700 V E VGES VGEM Continuous Transient ±20 V ±30 V IC25 TC = 25°C T IC90 TC = 90°C IF90 ICM TC = 25°C, 1 ms 32 A 21 A 18 A 110 A E SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load ICM = 70 A @ 0.8 VCES tSC TJ = 125°C, VCE = 1200.

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High Voltage IGBT with Diode IXGX 32N170AH1 VCES IC25 V CE(sat) tfi(typ) = 1700 V = 32 A = 5.0 V = 50 ns Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V 1700 V E VGES VGEM Continuous Transient ±20 V ±30 V IC25 TC = 25°C T IC90 TC = 90°C IF90 ICM TC = 25°C, 1 ms 32 A 21 A 18 A 110 A E SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load ICM = 70 A @ 0.8 VCES tSC TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω 10 μs L PC TC = 25°C T J TJM O Tstg 350 W -55 ... +150 °C 150 °C -55 ... +150 °C FC Mounting force with clip 22...130/5...30 N/lb Maximum lead temperature for soldering S 1.6 mm (0.062 in.) from case for 10 s Weight 300 °C 6 g OB Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. PLUS247 (IXGX) G C E G = Gate, E = Emitter, (TAB) C = Collector, TAB = Collector Features z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification Applications z Capacitor discharge & pulser circuits z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies BVCES V GE(th) IC = 1mA, VGE = 0 V I C = 250 μA, V CE = V GE 1700 3.0 V 5.0 V ICES VCE = 0.8 • VCES TJ = 25°C VGE = 0 V Note 1 TJ = 125°C 100 μA 3 mA IGES VCE = 0 V, VGE = ±20 V ±100 nA V CE(sat) I = I , V = 15 V C C90 GE T= J 25°C TJ = 125°C 4.0 5.0 V 4.8 V © 2006 IXYS All rights reserved DS99070C(01/06) IXGX 32N170AH1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. PLUS247 Outline (IXGX) gfs IC = IC25; VCE = 10 V Note 2 16 30 S C 3670 pF ies C V = 25 V, V = 0 V, f = 1 MHz oes CE GE 185 pF Cres 44 pF Q g Q ge Q gc t d(on) E tri Eon td(off) T tfi Eoff td(on) E tri Eon td(off) L tfi Eoff RthJC RthCK I = I , V = 15 V, V = 0.5 V C C90 GE CE CES Inductive load, TJ = 25°C IC = IC25, VGE = 15 V RG = 2.7 Ω, VCE = 0.5 VCES Inductive load, TJ = 125°C IC = IC25, VGE = 15 V RG = 2.7 Ω, VCE = 0.5 VCES 157 nC 25 nC 57 nC 27 50 4.1 270 50 1.25 27 47 5.2 280 82 1.7 ns ns mJ 500 ns 100 ns 2.5 mJ ns ns mJ ns ns mJ 0.35 K/W 0.15 K/W O Reverse Diode (FRED) S Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. VF B I RM t rr O RthJC IF = 60A, VGE = 0 V, Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % TJ = 150°C I F = 60A, V GE = 0 V, -di /dt F = 600 A/μs VR = 1200 V TJ = 125°C TJ = 125°C 2.4 2.7 V 2.4 V 50 A 55 A 150 ns 350 ns 0.35 K/W Notes: 1. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXGX 32N170AH1 IC - Amperes IC - Amperes Fig. 1. Output Characteristics @ 25ºC 70 VGE = 17V 60 15V 13V 11V 50 Fig. 2. Exteded Output Characteristics @ 25ºC 180 VGE = 17V 160 15V 13V 140 120 IC - Amperes 40 100 11V 9V 30 80 9V 20 10 0 0 70 60 50 40 30 20 10 0 0 10 9 8 7 1 1 7V E 2 3 4 5 6 7 8 9 10 VCE - Volts Fig. 3. Output Characteristics T @ 125ºC VGE = 17V 15V 13V E 11V 9V L 7V VCE(sat) - Normalized O 2 3 4 5 6 7 8 9 10 VCE - Volts S Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage BIC =42A 21A O10.5A TJ = 25ºC 60 40 20 7V 0 0 2 4 6 8 10 12 14 16 18 VCE - Volts Fig. 4. Dependence of VCE(sat) on Junction Temperature 1.8 VGE = 15V 1.6 I C = 42A 1.4 1.2 I C = 21A 1.0 0.8 I C = 10.5A 0.6 0.4 -50 -25 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 6. Input Admittance 80 70 60 50 20 150 IC - Amperes 6 40 5 30 TJ = 125ºC 25ºC - 40ºC 4 20 3 10 2 5 7 9 11 13 15 17 VGE - Volts 0 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 VGE - Volts VCE - Volts © 2006 IXYS All rights reserved IXGX 32N170AH1 g f s - Siemens Eon - MilliJoules Fig. 7. Transconductance 45 40 35 TJ = - 40ºC 25ºC 30 125ºC Fig. 8. Inductive Switching Energy Loss vs. Gate Resistance 6 18 Eoff Eon - - - - 5 TJ = 125ºC , VGE = 15V 15 VCE = 850V I C = 64A 4 12 Eoff - MilliJoules 25 3 9 20 I C = 32A 15 10 5 0 E 0 10 20 30 40 50 60 70 80 90 IC - Amperes Fig. 9. Inductive Swiching Energy Loss vs. T Collector Current 3.6 10 Eoff Eon - - - - 3.2 9 RG = 2.7Ω , VGE .


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