Document
High Voltage IGBT with Diode
IXGX 32N170AH1
VCES IC25 V
CE(sat)
tfi(typ)
= 1700 V = 32 A = 5.0 V = 50 ns
Symbol
Test Conditions
Maximum Ratings
VCES VCGR
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ
1700
V
1700
V
E VGES
VGEM
Continuous Transient
±20
V
±30
V
IC25
TC = 25°C
T IC90
TC = 90°C
IF90
ICM
TC = 25°C, 1 ms
32
A
21
A
18
A
110
A
E SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load
ICM = 70
A
@ 0.8 VCES
tSC
TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω
10
μs
L PC
TC = 25°C
T J
TJM
O Tstg
350
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
FC
Mounting force with clip
22...130/5...30 N/lb
Maximum lead temperature for soldering
S 1.6 mm (0.062 in.) from case for 10 s
Weight
300
°C
6
g
OB Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
PLUS247 (IXGX)
G C E
G = Gate, E = Emitter,
(TAB)
C = Collector, TAB = Collector
Features z High current handling capability z MOS Gate turn-on
- drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0
flammability classification
Applications z Capacitor discharge & pulser circuits z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode
power supplies
BVCES V
GE(th)
IC = 1mA, VGE = 0 V
I
C
=
250
μA,
V CE
=
V GE
1700 3.0
V 5.0 V
ICES
VCE = 0.8 • VCES
TJ = 25°C
VGE = 0 V
Note 1 TJ = 125°C
100 μA 3 mA
IGES
VCE = 0 V, VGE = ±20 V
±100 nA
V CE(sat)
I = I , V = 15 V
C
C90 GE
T= J
25°C
TJ = 125°C
4.0 5.0 V
4.8
V
© 2006 IXYS All rights reserved
DS99070C(01/06)
IXGX 32N170AH1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
PLUS247 Outline (IXGX)
gfs
IC = IC25; VCE = 10 V
Note 2
16 30
S
C
3670
pF
ies
C
V = 25 V, V = 0 V, f = 1 MHz
oes
CE
GE
185
pF
Cres
44
pF
Q g
Q ge
Q gc
t d(on)
E tri
Eon td(off)
T tfi
Eoff td(on)
E tri
Eon td(off)
L tfi
Eoff
RthJC RthCK
I = I , V = 15 V, V = 0.5 V
C C90 GE
CE
CES
Inductive load, TJ = 25°C IC = IC25, VGE = 15 V RG = 2.7 Ω, VCE = 0.5 VCES
Inductive load, TJ = 125°C IC = IC25, VGE = 15 V RG = 2.7 Ω, VCE = 0.5 VCES
157
nC
25
nC
57
nC
27 50 4.1 270 50 1.25
27 47 5.2 280 82 1.7
ns ns mJ 500 ns 100 ns 2.5 mJ
ns ns mJ ns ns mJ
0.35 K/W
0.15
K/W
O Reverse Diode (FRED)
S Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
VF
B I
RM
t rr
O RthJC
IF = 60A, VGE = 0 V, Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % TJ = 150°C
I
F
=
60A,
V GE
=
0
V,
-di /dt F
=
600
A/μs
VR = 1200 V
TJ = 125°C
TJ = 125°C
2.4 2.7 V
2.4
V
50
A
55
A
150
ns
350
ns
0.35 K/W
Notes: 1. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway.
2. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents:
4,835,592 4,850,072 4,881,106
4,931,844 5,017,508 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344 6,710,405B2 6,710,463
6,727,585 6,759,692 6,771,478 B2
IXGX 32N170AH1
IC - Amperes
IC - Amperes
Fig. 1. Output Characteristics
@ 25ºC
70
VGE = 17V
60
15V 13V
11V
50
Fig. 2. Exteded Output Characteristics
@ 25ºC
180
VGE = 17V
160
15V
13V
140
120
IC - Amperes
40
100
11V
9V
30
80 9V
20 10
0 0
70 60 50 40 30 20 10
0 0
10 9 8 7
1 1
7V
E 2
3
4
5
6
7
8
9 10
VCE - Volts
Fig. 3. Output Characteristics
T @ 125ºC VGE = 17V 15V 13V E 11V
9V
L 7V
VCE(sat) - Normalized
O 2
3
4
5
6
7
8
9 10
VCE - Volts
S Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
BIC =42A
21A
O10.5A
TJ = 25ºC
60
40
20 7V
0
0
2
4
6
8 10 12 14 16 18
VCE - Volts
Fig. 4. Dependence of VCE(sat) on Junction Temperature
1.8
VGE = 15V 1.6
I C = 42A
1.4
1.2
I C = 21A
1.0
0.8 I C = 10.5A
0.6
0.4 -50 -25
0
25
50
75 100 125
TJ - Degrees Centigrade
Fig. 6. Input Admittance
80 70 60 50
20 150
IC - Amperes
6
40
5
30
TJ = 125ºC 25ºC
- 40ºC
4
20
3
10
2
5
7
9
11
13
15
17
VGE - Volts
0
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
VGE - Volts
VCE - Volts
© 2006 IXYS All rights reserved
IXGX 32N170AH1
g f s - Siemens
Eon - MilliJoules
Fig. 7. Transconductance
45
40
35 TJ = - 40ºC
25ºC
30
125ºC
Fig. 8. Inductive Switching Energy Loss vs. Gate Resistance
6
18
Eoff
Eon - - - -
5 TJ = 125ºC , VGE = 15V
15
VCE = 850V
I C = 64A
4
12
Eoff - MilliJoules
25
3
9
20
I C = 32A
15 10
5 0
E 0
10 20 30 40 50 60 70 80 90
IC - Amperes
Fig. 9. Inductive Swiching Energy Loss vs.
T Collector Current
3.6
10
Eoff
Eon - - - -
3.2
9
RG = 2.7Ω , VGE .