TSMF4710

VISHAY TSMF4710 Vishay Semiconductors www.DataSheet4U.com GaAlAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSMF4710 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant power at wavelength of 870 nm. Features High radiant power High speed tr = 15 ns High modulation band width fc = 23 MHz Peak wavelength λp = 870 nm High reliability Low forward voltage Suitable for high pulse current application Wide angle of half intensity Compatible with automatic placement equipment EIA and ICE standard package Suitable for infrared, vapor phase and wavesolder process 8mm tape and reel standard: GS08 or GS18 Lead free component 94 8553 Applications High speed IR data transmission High power emitter for low space applications High performance transmissive or reflective sensors Parts Table Part TSMF4710 TSMF4710 Ordering code TSMF4710-GS08 TSMF4710-GS18 Remarks MOQ: 7500 pc (5 reels) MOQ: 8000 pc (1 reel) Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse Voltage Forward current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range tp/T = 0.5, tp = 100 µs tp = 100 µs Test condition Symbol VR IF IFM IFSM PV Tj Tamb Value 5 100 200 1 170 100 - 40 to + 85 Unit V mA mA A mW °C °C Document Number 81089 Rev. 1.2, 22-Jun-04 www.vishay.com 1 TSMF4710...