IXTK120N20P

PolarHTTM Power MOSFET IXTK 120N20P IXTQ 120N20P N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 200 V 120 A 22 m Ω TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 200 V 200 V VGS VGSM Continuous Transient ±20 V ±30 V ID25 ID(RMS) IDM I AR EAR E AS TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C T C = 25° C 120 A 75 A 300 A 60 A 60 mJ 2.0 J dv/dt PD TJ TJM Tstg IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤175° C, RG = 4 Ω TC = 25° C 10 V/ns 714 W -55 ... +175 °C 175 °C -55 ... +175 °C TL T SOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-3P TO-264 Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA 300 °C 260 °C 1.13/10 Nm/lb.in. 5.5 g 10 g Characteristic Values Min. Typ. Max. 200 V VGS(th) VDS = VGS, ID = 250µA 2.5 5.0 V IGSS VGS = ±20 VDC, VDS = 0 ±100 nA IDSS VDS = VDSS VGS = 0 V TJ = 175° C 25 µA 500 µA RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % 22 m Ω G D S TO-3P (IXTQ) (TAB) G DS (TAB) G = Gate S = Source D = Drain TAB = Drain Features l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power d...