PolarHT HiPerFET Power MOSFET
PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode
Preliminary Data Sheet
IXFH 96N15P IXFV 96N15P IXFV 96N15PS
...
Description
PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode
Preliminary Data Sheet
IXFH 96N15P IXFV 96N15P IXFV 96N15PS
VDSS ID25 trr
RDS(on)
=www.DataSheet4U.com 150 V = 96 A = 24 mΩ < 200 ns
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 175°C, RG = 4 Ω TC = 25°C
Maximum Ratings 150 150 ± 20 ± 30 96 75 250 60 40 1.0 10 480 -55 ... +175 175 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C °C N/lb
TO-247 (IXFH)
G
D
S
(TAB)
PLUS220 (IXFV)
G
D
S
D (TAB)
PLUS220SMD (IXFV__S)
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10s Mounting force Mounting torque TO-247 PLUS220 (TO-247)
300 250 11...65/2.4...11
G S G = Gate S = Source D = Drain TAB = Drain
D (TAB)
1.13/10 Nm/lb.in. 6 4 g g
Features
z
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 175°C
Characteristic Values Min. Typ. Max. 150 3.0 5.0 ±100 25 1000 24 V V nA µA µA mΩ
z
z
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages
z z z
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, dut...
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