HiPerFAST IGBT
HiPerFAST IGBT ISOPLUS247TM
TM
IXGR 50N60B2 IXGR 50N60B2D1
B2-Class High Speed IGBTs
(Electrically Isolated Back Surfa...
Description
HiPerFAST IGBT ISOPLUS247TM
TM
IXGR 50N60B2 IXGR 50N60B2D1
B2-Class High Speed IGBTs
(Electrically Isolated Back Surface)
Preliminary Data Sheet
VCES IC25 VCE(sat) tfi(typ)
www.DataSheet4U.com
= 600 V = 68 A = 2.2 V = 65 ns
IXGR_B2
IXGR_B2D1
Symbol V CES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 110°C (50N60B2D1 Diode) TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V TC = 25°C
Maximum Ratings 600 600 ±20 ±30 68 36 39 300 ICM = 100 200 -55 ... +150 150 -55 ... +150 V V V V A A A A A
ISOPLUS247 (IXGR) G G = Gate E = Emitter Features
z z z z z
C
E
(ISOLATED TAB)
C = Collector
W °C °C °C V
DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity
Applications
z z
50/60 Hz RMS, t = 1m 5
2500 g 300
z z
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
°C
z
Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers
Advantages Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 3.0 50N60B2 50N60B2D1 5.0 50 650 ±100 TJ = 125°C 1.8 1.7 2.2 V µA µA nA V V
z z z
VGE(th) ICES IGES VCE(sat)
IC = 250 µA...
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