PHB145NQ06T

www.DataSheet4U.com PHB145NQ06T N-channel TrenchMOS™ standard level FET Rev. 01 — 06 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Standard level threshold s Low on-state resistance. 1.3 Applications s Motors, lamps, solenoids s DC-to-DC converters s Uninterruptible power supplies s General industrial applications. 1.4 Quick reference data s VDS ≤ 55 V s Ptot ≤ 250 W s ID ≤ 75 A s RDSon ≤ 6 mΩ. 2. Pinning information Table 1: 1 2 3 mb Pinning - SOT404 (D2-PAK), simplified outline and symbol Simplified outline [1] Pin Description gate (g) drain (d) source (s) mounting base; connected to drain (d) Symbol mb d g s MBB076 2 1 3 MBK116 SOT404 (D2-PAK) [1] It is not possible to make connection to pin 2 of the SOT404 package. Philips Semiconductors PHB145NQ06T N-channel TrenchMOS™ standard level FET www.DataSheet4U.com 3. Ordering information Table 2: Ordering information Package Name PHB145NQ06T D2-PAK Description Version Plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT404 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temp...