APT17N80CC3

APT17N80CC3 www.DataSheet4U.com 800V 11.5A 0.320Ω Super Junction MOSFET C O OLMOS Power Semiconductors TO-254 Ultra low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated Hermetic TO-254 Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL dv/ dt D G S All Ratings: TC = 25°C unless otherwise specified. APT17N80CC3 UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 800 11.5 34.5 ±20 ±30 104 0.83 -55 to 150 260 50 17 0.5 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 640V, ID = 11.5A, TJ = 125°C) Repetitive Avalanche Current Repetitive Avalanche Energy 6 6 Volts Watts W/°C °C V/ns Amps mJ IAR EAR EAS Single Pulse Avalanche Energy 670 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 800 0.28 0.5 0.32 25 250 (VGS = 10V, 11A) Ohms µA nA Volts Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) 2.10 3 3.9 CAUTION: These ...