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IXGR60N60B2D1 Dataheets PDF



Part Number IXGR60N60B2D1
Manufacturers IXYS
Logo IXYS
Description HiPerFAST IGBT
Datasheet IXGR60N60B2D1 DatasheetIXGR60N60B2D1 Datasheet (PDF)

Advance Technical Data www.DataSheet4U.com HiPerFASTTM IGBT ISOPLUS247TM B2-Class High Speed IGBTs IXGR 60N60B2 IXGR 60N60B2D1 (Electrically Isolated Back Surface) VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol V CES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, t = 1m Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transi.

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Advance Technical Data www.DataSheet4U.com HiPerFASTTM IGBT ISOPLUS247TM B2-Class High Speed IGBTs IXGR 60N60B2 IXGR 60N60B2D1 (Electrically Isolated Back Surface) VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol V CES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, t = 1m Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V TC = 25°C 250 -55 ... +150 150 -55 ... +150 2500 5 300 W °C °C °C V g °C Applications z z Maximum Ratings 600 600 ± 20 ± 30 75 47 300 ICM = 150 V V V V A A A A PLUS247(IXGR) E153432 C E (ISOLATED TAB) G = Gate E = Emitter C = Collector Features z z z z z DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity z z z Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 3.0 TJ = 125°C 5.0 300 5 ± 100 2.0 V µA mA nA V Advantages z z z VGE(th) ICES IGES VCE(sat) IC = 250 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 50 A, VGE = 15 V Note 1 Easy assembly High power density Very fast switching speeds for high frequency applications © 2004 IXYS All rights reserved DS99161(04/04) IXGR 60N60B2 www.DataSheet4U.com IXGR 60N60B2D1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 40 58 3900 340 100 170 25 57 28 Inductive load, TJ = 25°C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 3.3 Ω 30 160 270 100 170 1.0 28 36 1.5 310 240 2.8 0.15 S pF pF pF nC nC nC ns ns ns ns ns ns mJ ns ns mJ 0.5 K/W K/W ISOPLUS 247 Outline gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = 50 A; VCE = 10 V, Note 1 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 50 A, VGE = 15 V, VCE = 0.5 VCES 2.5 mJ Inductive load, TJ = 125°C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2.0 Ω Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions IF = 60 A, VGE = 0 V, Note 1 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 150°C 2.1 1.4 8.3 35 V V A ns 0.85 K/W IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXGR 60N60B2 www.DataSheet4U.com IXGR 60N60B2D1 Fig. 1. Output Characteristics @ 25 Deg. C 100 90 80 70 350 VGE = 15V 13V 11V 9V 300 250 7V VGE = 15V 13V 11V Fig. 2. Extended Output Characteristics @ 25 deg. C I C - Amperes 60 50 40 30 20 10 0 0.5 1 1.5 2 I C - Amperes 9V 200 150 7V 100 50 5V 0 5V 2.5 3 V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C 100 90 80 VGE = 15V 13V 11V 9V 1.4 1.3 0 1 2 3 V C E - Volts 4 5 6 7 8 Fig. 4. Dependence of V CE(sat) on Tem perature V GE = 15V I C = 100A I C - Amperes 70 60 50 40 30 20 10 0 0.5 1 1.5 2 7V V C E (sat)- Normalized 1.2 1.1 1.0 0.9 0.8 0.7 0.6 I C = 50A 5V I C = 25A 2.5 3 -50 -25 0 25 50 75 100 125 150 V CE - Volts Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 3.7 3.4 3.1 TJ = 25ºC 250 200 300 TJ - Degrees Centigrade Fig. 6. Input Adm ittance VC E - Volts 2.8 2.5 2.2 1.9 I C - Amperes I C = 100A 50A 25A 150 100 50 TJ = 125ºC -40ºC TJ = 25ºC 1.6 1.3 5 6 7 8 9 10 11 12 13 14 15 16 17 0 4 5 6 7 8 9 10 V G E - Volts © 2004 IXYS All rights reserved V G E - Volts IXGR 60N60B2 www.DataSheet4U.com IXGR 60N60B2D1 Fig. 7. Transconductance 100 90 80 TJ = -40ºC 25ºC 125ºC 10 9 8 TJ = 125ºC VGE = 15V VCE = 400V I C = 100A Fig. 8. Dependence of Turn-Off Energy on RG E off - milliJoules g f s - Siemens 70 60 50 40 30 20 10 0 0 7 6 5 4 3 2 1 I C = 50A I C = 25A 50 100 150 200 250 300 I C - Amperes Fig. 9. Dependence of Turn-Off Energy on Ic 7 6 R G = 3.3Ω VGE = 15V VCE = 400V 7 6 5 4 3 2 1 0 5 10 15 R G - Ohms 20 25 30 35 40 45 50 Fig. 10. Dependence of Turn-Off Energy on Tem perature R G = 3.3Ω VGE = 15V VCE = 400V I C = 100A E off - MilliJoules 4 3 2 1 0 20 30 TJ = 125ºC E off - milliJoules 5 I C = 50A TJ = 25ºC I C = 25A 0 40 50 60 70 80 90 100 25 35 45 55 65 75 85 95 105 115 125 I C - Amperes Fig. 11. Dependence of Turn-Off Sw itching Tim e on RG 1200.


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