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HiPerFASTTM IGBT ISOPLUS247TM
B2-Class High Speed IGBTs
IXGR 60N60B2 IXGR 60N60B2D1
(Electrically Isolated Back Surface)
VCES IC25 VCE(sat) tfi(typ)
= 600 V = 75 A = 2.0 V = 100 ns
D1 Symbol V CES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, t = 1m Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V TC = 25°C 250 -55 ... +150 150 -55 ... +150 2500 5 300 W °C °C °C V g °C Applications
z z
Maximum Ratings 600 600 ± 20 ± 30 75 47 300 ICM = 150 V V V V A A A A
PLUS247(IXGR) E153432
C
E
(ISOLATED TAB)
G = Gate E = Emitter
C = Collector
Features
z z z z z
DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity
z z z
Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 3.0 TJ = 125°C 5.0 300 5 ± 100 2.0 V µA mA nA V
Advantages
z z z
VGE(th) ICES IGES VCE(sat)
IC
= 250 µA, VCE = VGE
VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 50 A, VGE = 15 V Note 1
Easy assembly High power density Very fast switching speeds for high frequency applications
© 2004 IXYS All rights reserved
DS99161(04/04)
IXGR 60N60B2 www.DataSheet4U.com IXGR 60N60B2D1
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 40 58 3900 340 100 170 25 57 28 Inductive load, TJ = 25°C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 3.3 Ω 30 160 270 100 170 1.0 28 36 1.5 310 240 2.8 0.15 S pF pF pF nC nC nC ns ns ns ns ns ns mJ ns ns mJ 0.5 K/W K/W ISOPLUS 247 Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = 50 A; VCE = 10 V, Note 1 VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 50 A, VGE = 15 V, VCE = 0.5 VCES
2.5 mJ
Inductive load, TJ = 125°C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2.0 Ω
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions IF = 60 A, VGE = 0 V, Note 1
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 150°C 2.1 1.4 8.3 35 V V A ns 0.85 K/W
IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344
IXGR 60N60B2 www.DataSheet4U.com IXGR 60N60B2D1
Fig. 1. Output Characteristics @ 25 Deg. C
100 90 80 70 350 VGE = 15V 13V 11V 9V 300 250 7V VGE = 15V 13V 11V
Fig. 2. Extended Output Characteristics @ 25 deg. C
I C - Amperes
60 50 40 30 20 10 0 0.5 1 1.5 2
I C - Amperes
9V 200 150 7V 100 50 5V 0
5V
2.5
3
V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C
100 90 80 VGE = 15V 13V 11V 9V 1.4 1.3
0
1
2
3
V C E - Volts
4
5
6
7
8
Fig. 4. Dependence of V CE(sat) on Tem perature
V GE = 15V
I C = 100A
I C - Amperes
70 60 50 40 30 20 10 0 0.5 1 1.5 2
7V
V C E (sat)- Normalized
1.2 1.1 1.0 0.9 0.8 0.7 0.6
I C = 50A
5V
I C = 25A
2.5
3
-50
-25
0
25
50
75
100
125
150
V CE - Volts Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage
3.7 3.4 3.1 TJ = 25ºC 250 200 300
TJ - Degrees Centigrade Fig. 6. Input Adm ittance
VC E - Volts
2.8 2.5 2.2 1.9
I C - Amperes
I C = 100A 50A 25A
150 100 50 TJ = 125ºC -40ºC TJ = 25ºC
1.6 1.3 5 6 7 8 9 10 11 12 13 14 15 16 17 0 4 5 6 7 8 9 10
V G E - Volts
© 2004 IXYS All rights reserved
V G E - Volts
IXGR 60N60B2 www.DataSheet4U.com IXGR 60N60B2D1
Fig. 7. Transconductance
100 90 80 TJ = -40ºC 25ºC 125ºC 10 9 8 TJ = 125ºC VGE = 15V VCE = 400V I C = 100A
Fig. 8. Dependence of Turn-Off Energy on RG
E off - milliJoules
g f s - Siemens
70 60 50 40 30 20 10 0 0
7 6 5 4 3 2 1
I C = 50A
I C = 25A
50
100
150
200
250
300
I C - Amperes Fig. 9. Dependence of Turn-Off Energy on Ic
7 6 R G = 3.3Ω VGE = 15V VCE = 400V 7 6 5 4 3 2 1
0
5
10
15
R G - Ohms
20
25
30
35
40
45
50
Fig. 10. Dependence of Turn-Off Energy on Tem perature
R G = 3.3Ω VGE = 15V VCE = 400V I C = 100A
E off - MilliJoules
4 3 2 1 0 20 30
TJ = 125ºC
E off - milliJoules
5
I C = 50A
TJ = 25ºC
I C = 25A 0 40 50 60 70 80 90 100 25 35 45 55 65 75 85 95 105 115 125
I C - Amperes Fig. 11. Dependence of Turn-Off Sw itching Tim e on RG
1200.