NTQD4154Z

www.DataSheet4U.com NTQD4154Z Power MOSFET 20 V, 7.5 A, Common−Drain, Dual N−Channel TSSOP−8 Features Common Drain for Ease of Circuit Connection Low RDS(on) Extending Battery Life ESD Protected Gate Applications http://onsemi.com V(BR)DSS RDS(on) TYP 15 mW @ 4.5 V 21 mW @ 2.5 V ID MAX Li−Ion Battery Protection Circuit Power Management in Portable and Battery−Powered Products MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Continuous Drain Current (Note 2) Power Dissi Dissipation ation (Note 2) Pulsed Drain Current Steady State TA = 25°C TA = 75°C PD ID Symbol VDSS VGS ID Value 20 ±12 7.5 5.8 1.52 9.8 7.6 PD IDM TJ, TSTG IS TL 2.6 30 −55 to 150 2.2 260 W W Units V V A G1 20 V 7.5 A N−Channel D N−Channel D 250 W G2 S1 250 W TA = 25°C t ≤ 10 s TA = 25°C TA = 75°C t ≤ 10 s TA = 25°C S2 TSSOP−8 CASE 948S PLASTIC A 8 1 tp = 10 µs A °C A °C D S1 S1 G1 Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) MARKING DIAGRAM & PIN ASSIGNMENT 1 2 3 4 54Z YWW N Top View 8 7 6 5 D S2 S2 G2 THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State Junction−to−Ambient − t ≤ 10 s Symbol RθJA RθJA Max 82 48 Units °C/W 54Z Y WW N = Device Code = Year = Work Week = MOSFET 1. Mounted onto a 2 ″ square FR−4 board (1 ″ sq. 2 oz. cu. 0.06 ″ thick single−si...