PDTA113ET

PDTA113E series PNP resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ Rev. 05 — 2 September 2009 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistors (RET). Table 1. Product overview Type number Package NXP PDTA113EE SOT416 PDTA113EK SOT346 PDTA113EM SOT883 PDTA113ES[1] SOT54 (TO-92) PDTA113ET SOT23 PDTA113EU SOT323 JEITA SC-75 SC-59A SC-101 SC-43A SC-70 JEDEC TO-236 TO-92 TO-236AB - [1] Also available in SOT54A and SOT54 variant packages (see Section 2) NPN complement PDTC113EE PDTC113EK PDTC113EM PDTC113ES PDTC113ET PDTC113EU 1.2 Features I Built-in bias resistors I Simplifies circuit design I Reduces component count I Reduces pick and place costs 1.3 Applications I General purpose switching and amplification I Inverter and interface circuits I Circuit drivers 1.4 Quick reference data Table 2. Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collector-emitter voltage output current (DC) bias resistor 1 (input) bias resistor ratio Conditions open base Min Typ Max Unit - - −50 V - - −100 mA 0.7 1 1.3 kΩ 0.8 1 1.2 NXP Semiconductors PDTA113E series PNP resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ 2. Pinning information Table 3. Pin SOT54 1 2 3 Pinning Description input (base) output (collector) GND (emitter) SOT54A 1 2 3 input (base) output (collector) GND (emitter) SOT54 variant 1 input (base) 2 output (collector) 3 GND (emitter) SOT23, SOT323, SOT346, SOT416 1 input (base) 2...