IXFN80N50Q2

Advance Technical Information www.DataSheet4U.com HiPerFETTM Power MOSFET IXFN 80N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 500 V ID25 = 80 A RDS(on)= 60 mΩ ≤ 250 ns trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS, t = 1 minute Mounting torque Terminal connection torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings G S 500 500 ± 30 ± 40 80 320 80 60 5.0 20 890 -55 ... +150 150 -55 ... +150 2500 V V V V A A A mJ J V/ns W °C °C °C V Features Double metal process for low gate resistance miniBLOC, with Aluminium nitride isolation Unclamped Inductive Switching (UIS) rated Low package inductance G = Gate S = Source S D D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Fast intrinsic Rectifier Applications DC-DC converters Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 5 0 0 2 . 5 5.0 V V Switched-mode power supplies DC choppers and resonant-mode V DSS V GS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VG S, ID = 8mA VGS = ±30 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID...