IXKC25N80C

www.DataSheet4U.com Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Preliminary Data Sheet Symbol VDSS VGS VGSM ID25 ID90 ID(RMS) EAS EAR dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.062 in.) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting force Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C TC = 90°C Package lead current limit Io Io = 10A, TC = 25°C = 20A IXKC 25N80C VDSS = 800 V ID25 = 20 A RDS(on) = 150 mΩ Maximum Ratings 800 ±20 ±30 20 14 45 690 0.5 6 140 -55 ... +150 150 -55 ... +125 300 2500 V V V A A A mJ mJ V/ns W °C °C °C °C V~ ISOPLUS220TM E153432 G D S D = Drain, G = Gate, S = Source VDS < VDSS, IF ≤ 17 A, TVJ = 150°C dIR/dt = 100 A/µs TC = 25°C Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z 3RD generation CoolMos power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) z Low thermal resistance due to reduced chip thickness z Low drain to tab capacitance(<30pF) z 11 ... 65 / 2.4 ...11 N/lb 3 g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 136 280 2 TJ = 25°C TJ = 125°C 10 ±200 150 mΩ mΩ 4 50 V µA µA nA Applications Switched Mode Power Supplies (SMPS) Uninterruptible Power Supplies (UPS) z Power Factor Correction (PFC) z Welding z Ind...