APT44GA60BD30C

APT44GA60BD30C www.DataSheet4U.com APT44GA60SD30C 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is TO APT44GA60SD30C -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting APT44GA60BD30C in low EMI, even when switching at high frequency. This device has a lower VCE(on) than a combi (IGBT and Diode) ® FEATURES Fast switching with low EMI Very Low Eoff for maximum efficiency Ultra low Cres for improved noise immunity Low conduction loss Low gate charge Increased intrinsic gate resistance for low EMI RoHS compliant TYPICAL APPLICATIONS ZVS phase shifted and other full bridge Half bridge High power PFC boost Welding UPS, solar, and other inverters High frequency, high efficiency industrial Absolute Maximum Ratings Symbol Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL Parameter Collector Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 Gate-Emitter Voltage 2 Ratings 600 78 44 130 ±30 337 130A @ 600V -55 to 150 300 Unit V A V W Total ...