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PBSS9410PA
100 V, 2.7 A PNP low VCEsat (BISS) transistor
Rev. 01 — 11 May 2010 Product data sheet
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www.DataSheet4U.com
PBSS9410PA
100 V, 2.7 A
PNP low VCEsat (BISS)
transistor
Rev. 01 — 11 May 2010 Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS)
transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
NPN complement: PBSS8510PA.
1.2 Features and benefits
Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional
transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability
1.3 Applications
Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM RCEsat
[1]
Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = −2.7 A; IB = −135 mA
[1]
Conditions open base
Min -
Typ 110
Max −100 −2.7 −4 166
Unit V A A mΩ
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
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NXP Semiconductors
PBSS9410PA
100 V, 2.7 A
PNP low VCEsat (BISS)
transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description base emitter collector
3 1 2 1 2
sym013
Simplified outline
Graphic symbol
3
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