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BLF7G22L-250P Dataheets PDF



Part Number BLF7G22L-250P
Manufacturers NXP
Logo NXP
Description Power LDMOS transistor
Datasheet BLF7G22L-250P DatasheetBLF7G22L-250P Datasheet (PDF)

www.DataSheet4U.com BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor Rev. 01 — 6 May 2010 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 IDq (mA) 1900 VDS (V) 28 PL(AV) (W) 70 Gp (dB) 18 η.

  BLF7G22L-250P   BLF7G22L-250P


BF1216 BLF7G22L-250P BLF7G22LS-250P


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