BLF7G27LS-140

www.DataSheet4U.com BLF7G27L-140; BLF7G27LS-140 Power LDMOS transistor Rev. 01 — 27 May 2010 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation IS-95 [1] f (MHz) 2500 to 2700 IDq (mA) 1300 VDS (V) 28 PL(AV) (W) 20 Gp (dB) 17.0 ηD (%) 22 ACPR885k (dBc) −45[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. 1.2 Features and benefits „ „ „ „ „ „ „ Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for low memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications „ RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2500 MHz to 2700 MHz frequency range www.DataSheet4U.com NXP Semiconductors BLF7G27L-140; BLF7G27LS-140 Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 1 2 3 4 5 [1] Pinning Description drain1 drain2 gate1 gate2 source drain1 drain2 gate1 gate2 source [1] [1] Simplified outline Graphic symbol BLF7G27L-140 (SOT502...