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FDME1034CZT Complementary PowerTrench® MOSFET
December 2009
FDME1034CZT
Complementary PowerTrench® MOSFET
N-channel: 20 V, 3.4 A, 66 mΩ P-channel: -20 V, -2.3 A, 142 mΩ Features General Description
Q1: N-Channel Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A This device is designed specifically as a single package solution for a DC/DC ‘Switching’ MOSFET in cellular handset and other ultra-portable applications. It features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.
Q2: P-Channel
Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin Free from halogenated compounds and antimony oxides HBM ESD protection level > 1600V (Note3) RoHS Compliant D2 G1 S1 Pin 1 D1 S2 G2 D1 D2
Applications
DC-DC Conversion Level Shifted Load Switch
S1 G1 D2
1 2 3
6 5 4
D1 G2 S2
BOTTOM
TOP MicroFET 1.6x1.6 Thin
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation for Single Operation Power Dissipation for Single Operation TA = 25 °C TA = 25 °C (Note 1a) (Note 1b) TA = 25 °C (Note 1a) Q1 20 ±8 3.4 6 1.3 0.6 -55 to +150 Q2 -20 ±8 -2.3 -6 Units V V A W °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJA Thermal Resistance, Junction to Ambient (Single Operation) Thermal Resistance, Junction to Ambient (Single Operation) (Note 1a) (Note 1b) 95 210 °C/W
Package Marking and Ordering Information
Device Marking 5T Device FDME1034CZT Package MicroFET 1.6x1.6 Thin
1
Reel Size 7 ’’
Tape Width 8 mm
Quantity 5000 units
www.fairchildsemi.com
©2009 Fairchild Semiconductor Corporation FDME1034CZT Rev.C
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FDME1034CZT Complementary PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol Parameter Test Conditions Type Min Typ Max Units
Off Characteristics
BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 µA, VGS = 0 V ID = -250 µA, VGS = 0 V ID = 250 µA, referenced to 25 °C ID = -250 µA, referenced to 25 °C VDS = 16 V, VGS = 0 V VDS = -16 V, VGS = 0 V VGS = ±8 V, VDS = 0 V Q1 Q2 Q1 Q2 Q1 Q2 A.