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FDME1034CZT Dataheets PDF



Part Number FDME1034CZT
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Complementary PowerTrench MOSFET
Datasheet FDME1034CZT DatasheetFDME1034CZT Datasheet (PDF)

www.DataSheet4U.com FDME1034CZT Complementary PowerTrench® MOSFET December 2009 FDME1034CZT Complementary PowerTrench® MOSFET N-channel: 20 V, 3.4 A, 66 mΩ P-channel: -20 V, -2.3 A, 142 mΩ Features General Description Q1: N-Channel „ „ „ „ „ „ „ „ Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A Max rDS(o.

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www.DataSheet4U.com FDME1034CZT Complementary PowerTrench® MOSFET December 2009 FDME1034CZT Complementary PowerTrench® MOSFET N-channel: 20 V, 3.4 A, 66 mΩ P-channel: -20 V, -2.3 A, 142 mΩ Features General Description Q1: N-Channel „ „ „ „ „ „ „ „ Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A This device is designed specifically as a single package solution for a DC/DC ‘Switching’ MOSFET in cellular handset and other ultra-portable applications. It features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications. Q2: P-Channel „ Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin „ Free from halogenated compounds and antimony oxides „ HBM ESD protection level > 1600V (Note3) „ RoHS Compliant D2 G1 S1 Pin 1 D1 S2 G2 D1 D2 Applications „ DC-DC Conversion „ Level Shifted Load Switch S1 G1 D2 1 2 3 6 5 4 D1 G2 S2 BOTTOM TOP MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation for Single Operation Power Dissipation for Single Operation TA = 25 °C TA = 25 °C (Note 1a) (Note 1b) TA = 25 °C (Note 1a) Q1 20 ±8 3.4 6 1.3 0.6 -55 to +150 Q2 -20 ±8 -2.3 -6 Units V V A W °C Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient (Single Operation) Thermal Resistance, Junction to Ambient (Single Operation) (Note 1a) (Note 1b) 95 210 °C/W Package Marking and Ordering Information Device Marking 5T Device FDME1034CZT Package MicroFET 1.6x1.6 Thin 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 5000 units www.fairchildsemi.com ©2009 Fairchild Semiconductor Corporation FDME1034CZT Rev.C www.DataSheet4U.com FDME1034CZT Complementary PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 µA, VGS = 0 V ID = -250 µA, VGS = 0 V ID = 250 µA, referenced to 25 °C ID = -250 µA, referenced to 25 °C VDS = 16 V, VGS = 0 V VDS = -16 V, VGS = 0 V VGS = ±8 V, VDS = 0 V Q1 Q2 Q1 Q2 Q1 Q2 A.


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