FDME410NZT

FDME410NZT N-Channel PowerTrench® MOSFET October 2013 FDME410NZT N-Channel PowerTrench® MOSFET 20 V, 7 A, 26 mΩ Features General Description „ Max rDS(on) = 26 mΩ at VGS = 4.5 V, ID = 7 A „ Max rDS(on) = 31 mΩ at VGS = 2.5 V, ID = 6 A „ Max rDS(on) = 39 mΩ at VGS = 1.8 V, ID = 5 A „ Max rDS(on) = 53 mΩ at VGS = 1.5 V, ID = 4 A „ Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin „ Free from halogenated compounds and antimony oxides „ HBM ESD protection level > 1800V (Note3) „ RoHS Compliant This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe. Applications „ Li-lon Battery Pack „ Baseband Switch „ Load Switch „ DC-DC Conversion G D Pin 1 D S D D S D D D D G S BOTTOM MicroFET 1.6x1.6 Thin TOP MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25 °C Power Dissipation for Single Operation TA = 25 °C Power Dissipation for Single Operation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 1b) Ratings 20 ±8 7 15 2.1 0.7 -55 to +150 Units V V A W °C RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 60 (Note 1b) 175 °C/W D...