STU4N62K3

www.DataSheet4U.com STD4N62K3 STU4N62K3 N-channel 620 V, 1.8 Ω, 3.8 A SuperMESH3™ Power MOSFET DPAK, IPAK Preliminary data Features Type STD4N62K3 STU4N62K3 ■ ■ ■ ■ ■ ■ VDSS 620 V RDS(on) max < 1.95 Ω ID 3.8 A Pw 70 W 3 1 2 1 3 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected DPAK IPAK Figure 1. Internal schematic diagram D(2) Application ■ Switching applications Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. Table 1. Device summary Marking 4N62K3 G(1) S(3) AM01476v1 Order codes STD4N62K3 STU4N62K3 Package DPAK IPAK Packaging Tape and reel Tube May 2010 Doc ID 17549 Rev 1 1/12 www.st.com 12 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. www.DataSheet4U.com Contents STD4N62K3, STU4N62K3 Contents 1 2 3 4 5 6 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . ....