STL18N55M5

www.DataSheet4U.com STL18N55M5 N-channel 550 V, 0.180 Ω, 13 A PowerFLAT™ (8x8) HV ultra low gate charge MDmesh™ V Power MOSFET Preliminary data Features Type STL18N55M5 VDSS @ TJmax 600 V RDS(on) max < 0.240 Ω ID 13 A (1) ' $ 3 3 3 "OTTOMVIEW 1. The value is rated according to Rthj-case ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 0OWER&,!4˜X (6 Application ■ Switching applications Figure 1. Internal schematic diagram Description MDmesh™ V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiencies. $ ' 3 !-V Table 1. Device summary Marking 18N55M5 Package PowerFLAT™ (8x8) HV Packaging Tape and reel Order code STL18N55M5 May 2010 Doc ID 17468 Rev 1 1/11 www.st.com 11 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. www.DataSheet4U.com Contents STL18N55M5 Contents 1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . ....