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MWE6IC9080NR1 Dataheets PDF



Part Number MWE6IC9080NR1
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description RF LDMOS Wideband Integrated Power Amplifiers
Datasheet MWE6IC9080NR1 DatasheetMWE6IC9080NR1 Datasheet (PDF)

Freescale Semiconductor Technical Data Document Number: MWE6IC9080N www.DataSheet4U.com Rev. 0, 4/2010 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9080N wideband integrated circuit is designed with on--chip matching that makes it usable from 865 to 960 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations. • Typical GSM Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 = 630 mA, Pout = 80 Watts CW Frequency 920.

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Freescale Semiconductor Technical Data Document Number: MWE6IC9080N www.DataSheet4U.com Rev. 0, 4/2010 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9080N wideband integrated circuit is designed with on--chip matching that makes it usable from 865 to 960 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations. • Typical GSM Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 = 630 mA, Pout = 80 Watts CW Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 29.0 28.8 28.5 PAE (%) 49.7 51.6 52.3 MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1 865-960 MHz, 80 W CW, 28 V GSM, GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, Pout = 128 Watts CW (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness • Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 80 Watts CW Pout • Typical Pout @ 1 dB Compression Point ≃ 90 Watts CW • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 = 630 mA, Pout = 35 Watts Avg. Gps (dB) 30.0 30.0 29.5 PAE (%) 37.0 37.8 38.0 SR1 @ 400 kHz (dBc) --62 --62 --62 SR2 @ 600 kHz (dBc) --75 --75 --75 EVM (% rms) 0.8 1.2 1.5 CASE 1618-02 TO-270 WB-14 PLASTIC MWE6IC9080NR1 CASE 1621-02 TO-270 WB-14 GULL PLASTIC MWE6IC9080GNR1 Frequency 920 MHz 940 MHz 960 MHz Features • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source Scattering Parameters • On--Chip Matching (50 Ohm Input, DC Blocked) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. VDS1 VGS2 VGS1 RFin RFout/VDS2 CASE 1617-02 TO-272 WB-14 PLASTIC MWE6IC9080NBR1 VGS1 VGS2 VDS1 Quiescent Current Temperature Compensation (1) NC VDS1 VGS2 VGS1 NC RFin RFin NC VGS1 VGS2 VDS1 NC 1 2 3 4 5 6 7 8 9 10 11 12 14 RFout /VDS2 13 RFout /VDS2 (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987. © Freescale Semiconductor, Inc., 2010. All rights reserved. MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1 1 RF Device Data Freescale Semiconductor Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Input Power Symbol VDSS VGS Tstg TC TJ Pin Value --0.5, +66 --0.5, +6 --65 to +150 150 225 20.5 www.DataSheet4U.com Unit Vdc Vdc °C °C °C dBm Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case GSM Application (Case Temperature 80°C, Pout = 80 W CW, 940 MHz) GSM EDGE Application (Case Temperature 80°C, Pout = 40 W CW, 940 MHz) Symbol RθJC Stage 1, 28 Vdc, IDQ1 = 230 mA Stage 2, 28 Vdc, IDQ2 = 630 mA Stage 1, 28 Vdc, IDQ1 = 230 mA Stage 2, 28 Vdc, IDQ2 = 630 mA 3.5 0.52 Value (2,3) Unit °C/W 3.6 0.54 Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 1B (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Stage 1 — Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 1 — On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 33 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1 = 230 mAdc) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1 = 230 mAdc, Measured in Functional Test) VGS(th) VGS(Q) VGG(Q) 1.5 — 15 2 2.7 17 3.5 — 19 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. (continued) MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Stage 2 — Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, .


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