Freescale Semiconductor Technical Data
Document Number: MRF8P23080H www.DataSheet4U.com Rev. 0, 5/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies from 2300 to 2400 MHz. Can be used in Class AB and Class C for all typical cellular base station modula...
