PBSS4032NX

www.DataSheet4U.com PBSS4032NX 30 V, 4.7 A NPN low VCEsat (BISS) transistor Rev. 01 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PX. 1.2 Features and benefits „ „ „ „ „ „ „ Very low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ „ „ „ Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = 4 A; IB = 400 mA [1] Conditions open base Min - Typ 45 Max 30 4.7 10 62.5 Unit V A A mΩ Pulse test: tp ≤ 300 μs; δ ≤ 0.02. www.DataSheet4U.com NXP Semiconductors PBSS4032NX 30 V, 4.7 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description emitter collector base 3 2 1 3 1 sym042 Simplified outline Graphic symbol 2 3. Ordering information Table 3. Ordering information Package Name PBSS...