PBSS5620PA

www.DataSheet4U.com PBSS5620PA 20 V, 6 A PNP low VCEsat (BISS) transistor Rev. 01 — 13 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4620PA. 1.2 Features and benefits „ „ „ „ „ Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability 1.3 Applications „ „ „ „ „ Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = −6 A; IB = −300 mA [1] Conditions open base Min - Typ 39 Max −20 −6 −7 58 Unit V A A mΩ Pulse test: tp ≤ 300 μs; δ ≤ 0.02. w w w . D a t a S h e e t 4 U . c NXP Semiconductors PBSS5620PA 20 V, 6 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description base emitter collector 3 1 2 1 2 sym013 Simplified outline Graphic symbol 3 Transparent top view 3. Or...