BLA6H1011-600

www.DataSheet4U.com BLA6H1011-600 LDMOS avionics power transistor Rev. 01 — 22 April 2010 Product data sheet 1. Product profile 1.1 General description 600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 50 μs; δ = 2 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (MHz) 1030 to 1090 VDS (V) 48 PL (W) 600 Gp (dB) 17 ηD (%) 52 tr (ns) 11 tf (ns) 5 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits „ Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply voltage of 48 V, an IDq of 100 mA, a tp of 50 μs with δ of 2 %: ‹ Output power = 600 W ‹ Power gain = 17 dB ‹ Efficiency = 52 % „ Easy power control „ Integrated ESD protection „ High flexibility with respect to pulse formats „ Excellent ruggedness „ High efficiency „ Excellent thermal stability „ Designed for broadband operation (1030 MHz to 1090 MHz) „ Internally matched for ease of use „ Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) www.DataSheet4U.com NXP Semiconductors BLA6H1011-600 LDMOS avionics power transistor 1.3 Applications „ 600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz frequency range 2. Pinning information Table 2. Pi...