Document
PD - 97485
IRF6706S2TRPbF IRF6706S2TR1PbF
l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET Application l Compatible with existing Surface Mount Techniques l 100% Rg tested
D G S D
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DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS Qg
tot
VGS Qgd
4.4nC
RDS(on)
3.0mΩ@10V
RDS(on)
5.2mΩ@4.5V
25V max ±20V max 13nC
Qgs2
1.8nC
Qrr
21nC
Qoss
9.5nC
Vgs(th)
1.8V
Applicable DirectFET Outline and Substrate Outline S1 S2 SB M2 M4
S1
DirectFET ISOMETRIC
L4
L6
L8
Description
The IRF6706S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6706S2TRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6706S2TRPbF has been optimized for the control FET socket of synchronous buck operating from 12 volt bus converters.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR
15
Typical RDS(on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current
g
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VGS, Gate-to-Source Voltage (V)
25 ±20 17 13 63 130 42 13
14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 0 10 20 ID= 13A VDS= 20V VDS= 13V
A
mJ A
ID = 17A 10 T J = 125°C
5
0 0 2 4 6
T J = 25°C 8 10 12 14 16 18 20
30
VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.50mH, RG = 25Ω, IAS = 13A.
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1
03/31/2010
IRF6706S2TR/TR1PbF
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Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
25 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 78 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. Max. Units
––– 18 3.0 5.2 1.8 -9.1 ––– ––– ––– ––– ––– 13 3.1 1.8 4.4 3.7 6.2 9.5 0.4 12 20 9.9 9.2 1810 470 210 ––– ––– 3.8 6.5 2.35 ––– 1.0 150 100 -100 ––– 20 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ns nC
Ω
Conditions
V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 17A V VGS = 4.5V, ID = 13A VDS = VGS, ID = 25µA
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mV/°C µA VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125°C nA S VGS = 20V VGS = -20V VDS = 13V, ID =13A VDS = 13V nC VGS = 4.5V ID = 13A See Fig. 18 VDS = 16V, VGS = 0V VDD = 13V, VGS = 4.5V ID = 13A RG= 6.8Ω VGS = 0V pF VDS = 13V ƒ = 1.0MHz
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Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min.
––– ––– ––– ––– –––
Typ. Max. Units
––– ––– ––– 17 21 33 A 130 1.0 26 32 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 13A, VGS = 0V TJ = 25°C, IF =13A di/dt = 250A/µs
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Notes:
Repetitive rating; pulse wid.