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IRF6706S2TRPBF Dataheets PDF



Part Number IRF6706S2TRPBF
Manufacturers International Rectifier
Logo International Rectifier
Description DirectFET Power MOSFET
Datasheet IRF6706S2TRPBF DatasheetIRF6706S2TRPBF Datasheet (PDF)

PD - 97485 IRF6706S2TRPbF IRF6706S2TR1PbF l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET Application  l Compatible with existing Surface Mount Techniques l 100% Rg tested D G S D www.DataSheet4U.com  DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified)   VDSS Qg tot VGS Qgd 4.4nC RDS(on) .

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PD - 97485 IRF6706S2TRPbF IRF6706S2TR1PbF l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET Application  l Compatible with existing Surface Mount Techniques l 100% Rg tested D G S D www.DataSheet4U.com  DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified)   VDSS Qg tot VGS Qgd 4.4nC RDS(on) 3.0mΩ@10V RDS(on) 5.2mΩ@4.5V 25V max ±20V max 13nC Qgs2 1.8nC Qrr 21nC Qoss 9.5nC Vgs(th) 1.8V  Applicable DirectFET Outline and Substrate Outline  S1 S2 SB M2 M4 S1 DirectFET ™ ISOMETRIC L4 L6 L8 Description The IRF6706S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6706S2TRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6706S2TRPbF has been optimized for the control FET socket of synchronous buck operating from 12 volt bus converters. Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR 15 Typical RDS(on) (mΩ) Max. Units V Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current g e e f Ãg h VGS, Gate-to-Source Voltage (V) 25 ±20 17 13 63 130 42 13 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 0 10 20 ID= 13A VDS= 20V VDS= 13V A mJ A ID = 17A 10 T J = 125°C 5 0 0 2 4 6 T J = 25°C 8 10 12 14 16 18 20 30 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes: QG Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Surface mounted on 1 in. square Cu board, steady state. „ TC measured with thermocouple mounted to top (Drain) of part. … Repetitive rating; pulse width limited by max. junction temperature. † Starting TJ = 25°C, L = 0.50mH, RG = 25Ω, IAS = 13A. www.irf.com 1 03/31/2010 IRF6706S2TR/TR1PbF www.DataSheet4U.com Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 25 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 78 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units ––– 18 3.0 5.2 1.8 -9.1 ––– ––– ––– ––– ––– 13 3.1 1.8 4.4 3.7 6.2 9.5 0.4 12 20 9.9 9.2 1810 470 210 ––– ––– 3.8 6.5 2.35 ––– 1.0 150 100 -100 ––– 20 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ns nC Ω Conditions V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 17A V VGS = 4.5V, ID = 13A VDS = VGS, ID = 25µA i i mV/°C µA VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125°C nA S VGS = 20V VGS = -20V VDS = 13V, ID =13A VDS = 13V nC VGS = 4.5V ID = 13A See Fig. 18 VDS = 16V, VGS = 0V VDD = 13V, VGS = 4.5V ID = 13A RG= 6.8Ω VGS = 0V pF VDS = 13V ƒ = 1.0MHz Ãi Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. ––– ––– ––– ––– ––– Typ. Max. Units ––– ––– ––– 17 21 33 A 130 1.0 26 32 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 13A, VGS = 0V TJ = 25°C, IF =13A di/dt = 250A/µs Ãg i i Notes: … Repetitive rating; pulse wid.


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