IRF6706S2TR1PBF

PD - 97485 IRF6706S2TRPbF IRF6706S2TR1PbF l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET Application  l Compatible with existing Surface Mount Techniques l 100% Rg tested D G S D www.DataSheet4U.com  DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified)   VDSS Qg tot VGS Qgd 4.4nC RDS(on) 3.0mΩ@10V RDS(on) 5.2mΩ@4.5V 25V max ±20V max 13nC Qgs2 1.8nC Qrr 21nC Qoss 9.5nC Vgs(th) 1.8V  Applicable DirectFET Outline and Substrate Outline  S1 S2 SB M2 M4 S1 DirectFET ™ ISOMETRIC L4 L6 L8 Description The IRF6706S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6706S2TRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reductio...