STL42N65M5

STL42N65M5 N-channel 650 V, 0.070 Ω, 34 A MDmesh™ V Power MOSFET in PowerFLAT™ 8x8 HV package Datasheet — preliminary data Features Order code STL42N65M5 VDSS @ TJmax 710 V RDS(on) max < 0.079 Ω ID 34 A(1) 1. The value is rated according to Rthj-case ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. 3 3 3 ' "OTTOMVIEW $ 0OWER&,!4˜X(6 Figure 1. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Order code STL42N65M5 Marking 42N65M5 Package PowerFLAT™ 8x8 HV Packaging Tape and reel April 2012 Doc ID 17443 Rev 2 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/14 www.st.com 14 Contents Contents STL42N65M5 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....