STS1DN45K3

www.DataSheet4U.com STS1DN45K3 Dual N-channel 450 V, 3.2 Ω, 0.5 A SuperMESH3™ Power MOSFET in SO-8 Preliminary data Features Type STS1DN45K3 ■ ■ ■ VDSS 450 V RDS(on) max < 3.8 Ω ID 0.5 A Pw 1.7 W 100% avalanche tested Low input capacitances and gate charge Low gate input resistance SO-8 Application ■ Switching applications Description SuperMESH3™ is a new Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. Figure 1. Internal schematic diagram Table 1. Device summary Marking 1ll45 Packages SO-8 Packaging Tape and reel Order codes STS1DN45K3 April 2010 Doc ID 17338 Rev 1 1/10 www.st.com 10 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. www.DataSheet4U.com Contents STS1DN45K3 Contents 1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuits .............................................. 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision histor...