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MRF8S26060HR3 Dataheets PDF



Part Number MRF8S26060HR3
Manufacturers Motorola Semiconductor
Logo Motorola Semiconductor
Description RF Power Field Effect Transistors
Datasheet MRF8S26060HR3 DatasheetMRF8S26060HR3 Datasheet (PDF)

Freescale Semiconductor Technical Data Document Number: MRF8S26060H www.DataSheet4U.com Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2620- 2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 15.5 Watts Avg., IQ Magnitude Clipping, Channel Ba.

  MRF8S26060HR3   MRF8S26060HR3


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