MRF8S26060HSR3

Freescale Semiconductor Technical Data Document Number: MRF8S26060H www.DataSheet4U.com Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2620- 2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 15.5 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 2620 MHz 2655 MHz 2690 MHz Gps (dB) 16.3 16.3 16.3 hD (%) 33.2 33.0 32.9 Output PAR (dB) 6.3 6.3 6.2 ACPR (dBc) -37.2 -37.7 -37.1 MRF8S26060HR3 MRF8S26060HSR3 2620-2690 MHz, 15.5 W AVG., 28 V W-CDMA, LTE LATERAL N-CHANNEL RF POWER MOSFETs Capable of Handling 10:1 VSWR, @ 32 Vdc, 2655 MHz, 78 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) Typical Pout @ 1 dB Compression Point ] 60 Watts CW Features 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate-Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems Optimized for Doherty Applications RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. Table 1. ...