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STBV42D Dataheets PDF



Part Number STBV42D
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description High voltage fast-switching NPN power transistor
Datasheet STBV42D DatasheetSTBV42D Datasheet (PDF)

www.DataSheet4U.com STBV42D High voltage fast-switching NPN power transistor Preliminary data Features ■ ■ ■ ■ High voltage capability Low spread of dynamic parameters Very high switching speed Integrated free-wheeling diode Application ■ Compact fluorescent lamps (CFLs) TO-92 Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to.

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www.DataSheet4U.com STBV42D High voltage fast-switching NPN power transistor Preliminary data Features ■ ■ ■ ■ High voltage capability Low spread of dynamic parameters Very high switching speed Integrated free-wheeling diode Application ■ Compact fluorescent lamps (CFLs) TO-92 Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Figure 1. Internal schematic diagram Table 1. Device summary Marking BV42D Package TO-92 Packaging BAG Order code STBV42D March 2010 Doc ID 17236 Rev 1 1/8 www.st.com 8 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. www.DataSheet4U.com Electrical ratings STBV42D 1 Electrical ratings Table 2. Symbol VCES VCEO VEBO IC ICM IB IBM PTOT TSTG TJ Absolute maximum ratings Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Collector-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Value 700 400 9 1 2 0.5 1 1 -65 to 150 °C 150 Unit V V V A A A A W Table 3. Symbol RthJC Thermal data Parameter Thermal resistance junction-case Value 125 Unit °C/W 2/8 Doc ID 17236 Rev 1 www.DataSheet4U.com STBV42D Electrical characteristics 2 Electrical characteristics Tcase = 25 °C; unless otherwise specified. Table 4. Symbol ICES IEBO VCEO(sus) (1) Electrical characteristics Parameter Collector cut-off current (VBE = 0) Emitter cut-off current (IC = 0) Collector-emitter sustaining voltage (IB = 0) Collector-emitter saturation voltage Base-emitter saturation voltage Test conditions VCE = 700 V VCE = 700 V VEB = 9 V IC = 1 mA IC = 0.25 A IC = 0.5 A IC = 0.75 A IC = 0.25 A IC = 0.5 A IC = 0.5 A, IC = 0.4 A, IC = 0.8 A IB = 50 mA IB = 125 mA IB = 250 mA IB = 50 mA IB = 125 mA VCE = 2 V VCE = 5 V VCE = 5 V 12 10 5 0.3 1.5 30 20 µs V 400 0.2 0.3 0.4 0.5 1 1.5 1 1.2 Min. Typ. Max. Unit 1 5 1 mA mA mA V V V V V V TC = 125 °C VCE(sat) (1) VBE(sat) (1) hFE (1) DC current gain tf VF Inductive Load Fall time Diode forward voltage IC = 0.25 A _ Vclamp = 300 V IB(on) = -IB(off) = 50 mA L = 3 mH Figure 2 IF = 350 mA 1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 % Doc ID 17236 Rev 1 3/8 www.DataSheet4U.com Electrical characteristics STBV42D 2.1 Test circuit Figure 2. Inductive load switching test circuit 1. Fast electronic switch 2. Non-inductive resistor 3. Fast recovery rectifier 4/8 Doc ID 17236 Rev 1 www.DataSheet4U.com STBV42D Package mechanical data 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their le.


2STW200 STBV42D STD845DN40


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