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STBV42D
High voltage fast-switching NPN power transistor
Preliminary data
Features
■ ■ ■ ■
High voltage capability Low spread of dynamic parameters Very high switching speed Integrated free-wheeling diode
Application
■
Compact fluorescent lamps (CFLs)
TO-92
Description
The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking BV42D Package TO-92 Packaging BAG
Order code STBV42D
March 2010
Doc ID 17236 Rev 1
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This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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Electrical ratings
STBV42D
1
Electrical ratings
Table 2.
Symbol VCES VCEO VEBO IC ICM IB IBM PTOT TSTG TJ
Absolute maximum ratings
Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Collector-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Value 700 400 9 1 2 0.5 1 1 -65 to 150 °C 150 Unit V V V A A A A W
Table 3.
Symbol RthJC
Thermal data
Parameter Thermal resistance junction-case Value 125 Unit °C/W
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STBV42D
Electrical characteristics
2
Electrical characteristics
Tcase = 25 °C; unless otherwise specified. Table 4.
Symbol ICES IEBO VCEO(sus)
(1)
Electrical characteristics
Parameter Collector cut-off current (VBE = 0) Emitter cut-off current (IC = 0) Collector-emitter sustaining voltage (IB = 0) Collector-emitter saturation voltage Base-emitter saturation voltage Test conditions VCE = 700 V VCE = 700 V VEB = 9 V IC = 1 mA IC = 0.25 A IC = 0.5 A IC = 0.75 A IC = 0.25 A IC = 0.5 A IC = 0.5 A, IC = 0.4 A, IC = 0.8 A IB = 50 mA IB = 125 mA IB = 250 mA IB = 50 mA IB = 125 mA VCE = 2 V VCE = 5 V VCE = 5 V 12 10 5 0.3 1.5 30 20 µs V 400 0.2 0.3 0.4 0.5 1 1.5 1 1.2 Min. Typ. Max. Unit 1 5 1 mA mA mA V V V V V V
TC = 125 °C
VCE(sat)
(1)
VBE(sat) (1)
hFE (1)
DC current gain
tf VF
Inductive Load Fall time Diode forward voltage
IC = 0.25 A _ Vclamp = 300 V IB(on) = -IB(off) = 50 mA L = 3 mH Figure 2 IF = 350 mA
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
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Electrical characteristics
STBV42D
2.1
Test circuit
Figure 2. Inductive load switching test circuit
1. Fast electronic switch 2. Non-inductive resistor 3. Fast recovery rectifier
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STBV42D
Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their le.