NTMFS4898NF

NTMFS4898NF Power MOSFET 30 V, 117 A, Single N−Channel, SO−8FL Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications CPU Power Delivery DC−DC Converters Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) VDSS 30 V VGS ±20 V TA = 25°C ID 22.5 A TA = 85°C 16.2 Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA v 10 sec TA = 25°C PD TA = 25°C ID TA = 85°C 2.72 W 36.7 A 26.5 Power Dissipation TA = 25°C PD RqJA, t v 10 sec Steady Continuous Drain State TA = 25°C ID Current RqJA (Note 2) TA = 85°C 7.23 W 13.2 A 9.5 Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) TA = 25°C PD TC = 25°C ID TC = 85°C 0.93 W 117 A 84.4 Power Dissipation RqJC (Note 1) TC = 25°C PD Pulsed Drain Current tp=10ms TA = 25°C IDM 73.5 W 234 A Current limited by package TA = 25°C Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, IL = 39 Apk, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IDmaxpkg TJ, TSTG IS dV...