TBN4227

www.DataSheet4U.com Semiconductor TBN4227 Series Si NPN Transistor SOT-323 Unit in mm 2.1±0.1 1.25±0.05 □ Applications - VHF and UHF low noise amplifier - Wide band amplifier 2.0±0.2 1.30±0.1 1 3 2 0.30±0.1 0.1 Min. □ Features - High gain bandwidth product fT = 8 GHz at VCE = 3 V, IC = 7 mA fT = 9 GHz at VCE = 3 V, IC = 20 mA - High power gain - Low noise figure NF = 1.2 dB at VCE = 3 V, IC = 3 mA, f = 1 GHz |S21|2 = 11.4 dB at VCE = 3 V, IC = 7 mA, f = 1 GHz 0.90±0.1 Pin Configuration 1. Base 2. Emitter 3. Collector □ Absolute Maximum Ratings (TA = 25 ℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Operating Junction Temperature Storage Temperature Symbol BVCBO BVCEO BVEBO IC Ptot Tj Tstg Ratings 20 8 3 65 150 150 -65 ~ 150 Unit V V V mA mW ℃ ℃ Caution : Electro Static Discharge sensitive device 0~0.1 0.15±0.05 1 www.DataSheet4U.com TBN4227 Series □ Electrical Characteristics (TA = 25 ℃) Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Gain Bandwidth Product Insertion Power Gain Noise Figure Reverse Transfer Capacitance Symbol ICBO IEBO hFE fT |S21|2 NF Cre Test Conditions VCB = 15 V, IE = 0 mA VEB = 2 V, IC = 0 mA VCE = 3 V, IC = 7 mA VCE = 3 V, IC = 7 mA VCE = 3 V, IC = 7 mA, f = 1 GHz VCE = 3 V, IC = 3 mA, f = 1 GHz VCB = 3 V, IE = 0 mA, f = 1 MHz Min. 70 5.0 9.0 Typ. 100 8.0 11.4 1.2 0.62 Max. 0.5 0.5 250 2.0 0.9 GHz dB dB pF Unit ㎂ ㎂ □ hFE Cl...