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IXFK180N25T Dataheets PDF



Part Number IXFK180N25T
Manufacturers IXYS
Logo IXYS
Description GigaMOS Power MOSFET
Datasheet IXFK180N25T DatasheetIXFK180N25T Datasheet (PDF)

Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK180N25T IXFX180N25T RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 250V 180A 12.9mΩ 200ns Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25.

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Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK180N25T IXFX180N25T RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 250V 180A 12.9mΩ 200ns Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 250 250 ± 20 ± 30 180 160 500 40 3 20 1390 -55 ... +150 150 -55 ... +150 V V V V A A A A J V/ns W °C °C °C °C °C Nm/lb.in. N/lb. g g G = Gate S = Source (TAB) D = Drain TAB = Drain G D S (TAB) PLUS247 (IXFX) Features z z z z z 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247) 300 260 1.13/10 20..120 /4.5..27 10 6 International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 250 2.5 5.0 ± 200 V V nA z z Easy to Mount Space Savings High Power Density Applications z z z 50 µA 3 mA 12.9 mΩ z z z z DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications © 2009 IXYS CORPORATION, All rights reserved DS100129(03/09) www.DataSheet4U.com IXFK180N25T IXFX180N25T Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Resistive Switching Times VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 60A, Note 1 Characteristic Values Min. Typ. Max. 100 160 28 2050 158 37 33 100 28 345 122 70 0.09 0.15 S nF pF pF ns ns ns ns nC nC nC °C/W °C/W TO-264 (IXFK) Outline Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 60A, VGS = 0V, Note 1 IF = 90A, -di/dt = 100A/µs VR = 75V, VGS = 0V 0.77 11 Characteristic Values Min. Typ. Max. 180 720 1.3 200 A A V ns µC A PLUS 247TM (IXFX) Outline Note 1: Pulse Test, t ≤ 300µs; Duty Cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. A A1 A2 b b1 b2 C D E e L L1 Q R ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 7,157,338B2 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 www.DataSheet4U.com IXFK180N25T IXFX180N25T Fig. 1. Output Characteristics @ 25ºC 180 160 140 250 VGS = 10V 8V 7V 350 300 Fig. 2. Extended Output Characteristics @ 25ºC VGS = 10V 7V ID - Amperes 120 ID - Amperes 100 80 60 6V 200 150 6V 100 40 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 5V 50 5V 0 0 2 4 6 8 10 12 14 16 18 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125ºC 180 160 140 VGS = 10V 7V 2.8 2.6 2.4 6V Fig. 4. RDS(on) Normalized to ID = 90A Value vs. Junction Temperature VGS = 10V ID - Amperes 120 100 80 60 40 20 0.


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