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Advance Technical Information
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GigaMOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK180N25T IXFX180N25T
RDS(on) ≤ ≤ trr
TO-264 (IXFK)
VDSS ID25
= =
250V 180A 12.9mΩ 200ns
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 250 250 ± 20 ± 30 180 160 500 40 3 20 1390 -55 ... +150 150 -55 ... +150 V V V V A A A A J V/ns W °C °C °C °C °C Nm/lb.in. N/lb. g g
G = Gate S = Source (TAB) D = Drain TAB = Drain
G D
S
(TAB)
PLUS247 (IXFX)
Features
z z z z z
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247)
300 260 1.13/10 20..120 /4.5..27 10 6
International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on)
Advantages
z
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A, Note 1 TJ = 125°C
Characteristic Values Min. Typ. Max. 250 2.5 5.0 ± 200 V V nA
z z
Easy to Mount Space Savings High Power Density
Applications
z z z
50 µA 3 mA 12.9 mΩ
z z z z
DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications
© 2009 IXYS CORPORATION, All rights reserved
DS100129(03/09)
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IXFK180N25T IXFX180N25T
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Resistive Switching Times VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 60A, Note 1
Characteristic Values Min. Typ. Max. 100 160 28 2050 158 37 33 100 28 345 122 70 0.09 0.15 S nF pF pF ns ns ns ns nC nC nC °C/W °C/W
TO-264 (IXFK) Outline
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83
Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 60A, VGS = 0V, Note 1 IF = 90A, -di/dt = 100A/µs VR = 75V, VGS = 0V 0.77 11 Characteristic Values Min. Typ. Max. 180 720 1.3 200 A A V ns µC A
PLUS 247TM (IXFX) Outline
Note 1: Pulse Test, t ≤ 300µs; Duty Cycle, d ≤ 2%.
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
7,157,338B2
6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537
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Fig. 1. Output Characteristics @ 25ºC
180 160 140 250 VGS = 10V 8V 7V 350 300
Fig. 2. Extended Output Characteristics @ 25ºC
VGS = 10V
7V
ID - Amperes
120
ID - Amperes
100 80 60
6V
200 150 6V 100
40 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 5V 50 5V 0 0 2 4 6 8 10 12 14 16 18
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ 125ºC
180 160 140 VGS = 10V 7V 2.8 2.6 2.4 6V
Fig. 4. RDS(on) Normalized to ID = 90A Value vs. Junction Temperature
VGS = 10V
ID - Amperes
120 100 80 60 40 20 0.