Power MOSFET
GigaMOSTM TrenchT2 HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK360N15T2...
Description
GigaMOSTM TrenchT2 HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK360N15T2 IXFX360N15T2
VDSS =
ID25 =
RDS(on)
trr
150V 360A 4.0m 150ns
TO-264 (IXFK)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IL(RMS) IDM
IA EAS
PD
dV/dt
TJ TJM Tstg
TL TSOLD
Md FC
Weight
Test Conditions
TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M
Continuous Transient
Maximum Ratings
150
V
150
V
20
V
30
V
TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM
TC = 25C TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 175°C
360 160 900
100 TBD
1670
20
-55 ... +175 175
-55 ... +175
A A A
A J
W
V/ns
C C C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s
300
°C
260
°C
Mounting Torque (TO-264) Mounting Force (PLUS247)
1.13/10 20..120 /4.5..27
Nm/lb.in. N/lb.
TO-264 PLUS247
10
g
6
g
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS
VGS = 20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 150C
RDS(on)
VGS = 10V, ID = 60A, Note 1
Characteristic Values Min. Typ. Max.
150
V
2.5
5.0 V
200 nA
50 A 5 mA
4.0 m
G D S Tab
PLUS247 (IXFX)
G
D S
Tab
G = Gate S = Source
D = Drain Tab = Drain
Features
International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on)
Advantages
Easy to Mount Space Savings Hi...
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