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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
Preliminary data
Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C I S ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
IXFH16N90 IXFX16N90
VDSS = 900 V ID25 = 16 A RDS(on) = 0.65 W
trr £ 200 ns
Maximum Ratings 900 900 ± 20 ± 30 16 64 16 45 5 360 -55 ... +150 150 -55 ... +150 300 1.13/10 6 V V V V A A A mJ V/ns W °C °C °C °C Nm/lb.in. g
TO-247 AD (IXFH)
(TAB)
PLUS 247TM (IXFX)
G
C (TAB) D
Features
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International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 900 2.0 4.5 ±100 TJ = 25°C TJ = 125°C 25 250 0.65 V V nA µA µA Ω
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VDSS VGS(th) I GSS I DSS RDS(on)
VGS = 0 V, ID = 250µA VDS = VGS, ID = 5 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V
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DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls
Advantages
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VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
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Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) or mounting clip or spring (PLUS 247TM) Space savings High power density
© 1998 IXYS All rights reserved
97547(2/98)
IXFHwww.DataSheet4U.com 16N90 IXFX 16N90
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 6 10 4500 VGS = 0 V, VDS = 25 V, f = 1 MHz 430 150 27 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 2 Ω (External), 30 120 30 220 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 30 85 0.35 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain
TO-247 AD (IXFH) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 ID25, pulse test
1
2
3
Dim.
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM I F = IS -di/dt = 100 A/µs, VR = 100 V Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 16 64 1.5 A A V
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
PLUS 247TM Outline
I F = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % TJ = 25° C TJ = 125° C TJ = 25° C TJ = 125° C TJ = 25° C TJ = 125° C 1 2 10 15
200 n s 350 n s µC µC A A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
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