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IXFX16N90 Dataheets PDF



Part Number IXFX16N90
Manufacturers IXYS
Logo IXYS
Description HiPerFET Power MOSFETs
Datasheet IXFX16N90 DatasheetIXFX16N90 Datasheet (PDF)

www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C I S ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C IXFH16N90 IXF.

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www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C I S ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C IXFH16N90 IXFX16N90 VDSS = 900 V ID25 = 16 A RDS(on) = 0.65 W trr £ 200 ns Maximum Ratings 900 900 ± 20 ± 30 16 64 16 45 5 360 -55 ... +150 150 -55 ... +150 300 1.13/10 6 V V V V A A A mJ V/ns W °C °C °C °C Nm/lb.in. g TO-247 AD (IXFH) (TAB) PLUS 247TM (IXFX) G C (TAB) D Features l l l l l l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 900 2.0 4.5 ±100 TJ = 25°C TJ = 125°C 25 250 0.65 V V nA µA µA Ω l l l VDSS VGS(th) I GSS I DSS RDS(on) VGS = 0 V, ID = 250µA VDS = VGS, ID = 5 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 • VDSS VGS = 0 V l l l DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Advantages l VGS = 10 V, ID = 0.5 • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % l l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) or mounting clip or spring (PLUS 247TM) Space savings High power density © 1998 IXYS All rights reserved 97547(2/98) IXFHwww.DataSheet4U.com 16N90 IXFX 16N90 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 6 10 4500 VGS = 0 V, VDS = 25 V, f = 1 MHz 430 150 27 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 Ω (External), 30 120 30 220 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 30 85 0.35 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain TO-247 AD (IXFH) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 • ID25, pulse test 1 2 3 Dim. Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM I F = IS -di/dt = 100 A/µs, VR = 100 V Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 16 64 1.5 A A V Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC PLUS 247TM Outline I F = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % TJ = 25° C TJ = 125° C TJ = 25° C TJ = 125° C TJ = 25° C TJ = 125° C 1 2 10 15 200 n s 350 n s µC µC A A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 .


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