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Advance Technical Information
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GigaMOSTM TrenchT2 HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK320N17T2 IXFX320N17T2
RDS(on) ≤ ≤ trr
TO-264 (IXFK)
VDSS ID25
= =
170V 320A 5.2mΩ 150ns
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
Maximum Ratings 170 170 ± 20 ± 30 320 160 800 100 5 1670 20 -55 ... +175 175 -55 ... +175 V V V V A A A A J W V/ns °C °C °C °C °C Nm/lb.in. N/lb. g g
G = Gate S = Source D = Drain TAB = Drain
G D S
(TAB)
PLUS247 (IXFX)
(TAB)
Features
z z z z z
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247)
300 260 1.13/10 20..120 /4.5..27 10 6
International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on)
Advantages
z z
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A, Note 1 TJ = 150°C
Characteristic Values Min. Typ. Max. 170 2.5 5.0 ± 200 V V nA
z
Easy to Mount Space Savings High Power Density
Applications
z z z z
50 μA 5 mA 5.2 mΩ
z z z z
Synchronous Recification DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100188(09/09)
www.DataSheet4U.com IXFK320N17T2 IXFX320N17T2
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 100A RG = 1Ω (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 60A, Note 1
Characteristic Values Min. Typ. Max. 120 190 45 2890 410 1.96 46 170 115 230 640 185 175 0.09 0.15 S nF pF pF Ω ns ns ns ns nC nC nC °C/W °C/W
TO-264 (IXFK) Outline
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83
Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 100A, VGS = 0V, Note 1 IF = 160A, -di/dt = 100A/μs VR = 60V, VGS = 0V 0.53 9.00 Characteristic Values Min. Typ. Max. 320 1280 1.25 150 A A V ns μC A
PLUS 247TM (IXFX) Outline
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
7,157,338B2
6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537
www.DataSheet4U.com IXFK320N17T2 IXFX320N17T2
Fig. 1. Output Characteristics @ T J = 25ºC
320 280 240 VGS = 15V 10V 8V 7V 400 350 300
Fig. 2. Extended Output Characteristics @ T J = 25ºC
VGS = 15V 10V 7V
6V
ID - Amperes
6V
160 120 5.5V 80 40 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 5V
ID - Amperes
200
250 200 150 100 50 0 0 1 2 3 4 5 6 7 5V 5.5V
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ T J = 150ºC
320 280 240 VGS = 15V 10V 7V 3.4 3.0 2.