IXGH30N60C3C1

Preliminary Technical Information GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 30A 3.0V 47ns High Speed PT IGBTs for 40 - 100kHz Switching TO-263 (IXGA) G E C (TAB) Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 60 30 13 150 ICM = 60 @ ≤ VCES 220 -55 ... +150 150 -55 ... +150 W °C °C °C °C °C Nm/lb.in. g g g G C E C (TAB) V V V V A A A A A TO-220 (IXGP) G C C (TAB) E TO-247 (IXGH) G = Gate E = Emitter Features C = Collector TAB = Collector 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247 300 260 1.13/10 2.5 3.0 6.0 Optimized for Low Switching Losses Square RBSOA Anti-Parallel Schottky Diode International Standard Packages Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = VGE VCE = VCES, VGE = 0V TJ = 125°C VCE = 0V, VGE = ± 20V IC = 20A, VGE = 15V, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 3.5 5.5 25 V μA High Power Density Low Gate Drive Requirement Applications High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers W...