IXGH48N60B3C1

Preliminary Technical Information www.DataSheet4U.com GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode IXGH48N60B3C1 VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 48A 1.8V 116ns Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Limited by Leads) TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 75 48 20 280 ICM = 120 @ ≤ VCES 300 -55 ... +150 150 -55 ... +150 W °C °C °C °C °C Nm/lb.in. g V V V V A A A A A Features z G C ( TAB ) E C = Collector TAB = Collector G = Gate E = Emitter z z z Optimized for Low Conduction and Switching Losses Square RBSOA Anti-Parallel Schottky Diode International Standard Package 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque 300 260 1.13/10 6 Advantages z z High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250μA, VGE = 0V IC = 250μA, VCE = VGE VCE = VCES, VGE = 0V TJ = 125°C VCE = 0V, VGE = ± 20V IC = 32A, VGE = 15V, Note 1 Characteristic Values Min. Typ. Max. 600 3.0 5.0 V V z z z z z z z z 50 μ A 1.75 mA ±100 nA 1.8 V Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ball...