Preliminary Technical Information
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GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
High Speed PT IGBT ...
Preliminary Technical Information
www.DataSheet4U.com
GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
High Speed PT IGBT for 40 - 100kHz Switching
IXGH48N60C3C1
VCES IC110 VCE(sat) tfi(typ)
= = ≤ =
600V 48A 2.5V 38ns
TO-247 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 Seconds Mounting Torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Limited by Leads) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load TC = 25°C Maximum Ratings 600 600 ±20 ±30 75 48 20 250 30 300 ICM = 100 @ < VCES 300 -55 ... +150 150 -55 ... +150 300 260 1.13/10 6 W °C °C °C °C °C Nm/lb.in g Applications
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V V V V A A A A A mJ A Features
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G
C
E C
( TAB )
G = Gate E = Emitter
= Collector
TAB = Collector
Optimized for Low Switching Losses Square RBSOA Anti-Parallel
Schottky Diode Fast Switching Avalanche Rated International Standard Package
Advantages
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High Power Density Low Gate Drive Requirement
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = VGE TJ = 125°C VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V IC = 30A, VGE = 15V, Note 1 TJ = 125°C
Characteristic Values Min. Typ. Max. 3.0 5.5 V 50 μA 1.75 mA ±100 2.3 1.8 2.5 nA V V
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