PBHV9115T

www.DataSheet4U.com PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor Rev. 02 — 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8115T. 1.2 Features I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified 1.3 Applications I I I I I I LED driver for LED chain module LCD backlighting High Intensity Discharge (HID) front lighting Automotive motor management Hook switch for wired telecom Switch mode power supply 1.4 Quick reference data Table 1. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain VCE = −10 V; IC = −50 mA Conditions open base Min 100 Typ 220 Max −150 −1 Unit V A www.DataSheet4U.com NXP Semiconductors PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description base emitter collector 1 2 2 sym013 Simplified outline 3 Graphic symbol 3 1 3. Ordering information Table 3. Ordering information Package Name PBHV9115T Description plastic surface-mounted package; 3 leads Version SOT23 Type number 4. Marking Table 4. Marking codes Marking code[1] W7* Type number PBHV9115T [1] * = -: made in Hong Kong * = p: m...