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PBRN123E series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 01 — 27 February 2007 Product data sheet
1. Product profile
1.1 General description
800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages.
Table 1. Product overview Package NXP PBRN123EK PBRN123ES[1] PBRN123ET
[1]
Type number
JEITA SC-59A SC-43A -
JEDEC TO-236 TO-92 TO-236AB
SOT346 SOT54 SOT23
Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance
1.3 Applications
I Digital application in automotive and industrial segments I Medium current peripheral driver I Switching loads
1.4 Quick reference data
Table 2. Symbol VCEO IO Quick reference data Parameter collector-emitter voltage output current PBRN123EK, PBRN123ET PBRN123ES Conditions open base
[1]
Min -
Typ -
Max 40 600 800
Unit V mA mA
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NXP Semiconductors
PBRN123E series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Quick reference data …continued Parameter repetitive peak output current PBRN123EK, PBRN123ET tp ≤ 1 ms; δ ≤ 0.33 1.54 0.9 2.2 1 800 2.86 1.1 mA kΩ bias resistor 1 (input) bias resistor ratio Conditions Min Typ Max Unit
Table 2. Symbol IORM R1 R2/R1
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
2. Pinning information
Table 3. Pin SOT54 1 2 3 input (base) output (collector) GND (emitter)
R1
Pinning Description Simplified outline Symbol
2 1 2 3
001aab347 006aaa145
1
R2
3
SOT54A 1 2 3 input (base) output (collector) GND (emitter)
R1
2 1 2 3
001aab348 006aaa145
1
R2
3
SOT54 variant 1 2 3 input (base) output (collector) GND (emitter)
R1
2 1 2 3
001aab447 006aaa145
1
R2
3
SOT23; SOT346 1 2 3 input (base) GND (emitter) output (collector)
1 2
006aaa144 sym007
3
R1
3 1
R2
2
PBRN123E_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 27 February 2007
2 of 17
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NXP Semiconductors
PBRN123E series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ
3. Ordering information
Table 4. Ordering information Package Name PBRN123EK PBRN123ES[1] PBRN123ET
[1]
Type number
Description plastic surface-mounted package; 3 leads
Version SOT346
SC-59A SC-43A -
plastic single-ended leaded (through hole) package; SOT54 3 leads plastic surface-mounted package; 3 leads SOT23
Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
4. Marking
Table 5. Marking codes Marking code[1] G3 N123ES *7J Type number PBRN123EK PBRN123ES PBRN123ET
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
5. Limiting values
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO VI Parameter collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO output current PBRN123EK, PBRN123ET PBRN123ES IORM repetitive peak output current PBRN123EK, PBRN123ET tp ≤ 1 ms; δ ≤ 0.33 800 mA
[1] [2][3] [1]
Conditions open emitter open base open collector
Min -
Max 40 40 10 +22 −10 600 700 800
Unit V V V V V mA mA mA
PBRN123E_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 27 February 2007
3 of 17
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NXP Semiconductors
PBRN123E series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter total power dissipation PBRN123EK, PBRN123ET Conditions Tamb ≤ 25 °C
[1] [2] [3]
Min −65 −65
Max 250 370 570 700 150 +150 +150
Unit mW mW mW mW °C °C °C
PBRN123ES Tj Tamb Tstg
[1] [2] [3]
[1]
junction temperature ambient temperature storage temperature
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint.
600
(1)
006aaa998
Ptot (mW) 400
(2)
(3)
200
0 −75
−25
25
75
125 175 Tamb (°C)
(1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint
Fig 1. Power derating curves for SOT23 (TO-236AB) and SOT346 (SC-59A/TO-236)
PBRN123E_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 27 February 2007
4 of 17
www.DataSheet4U.com
NXP Semiconductors
PBRN123E series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ
800 Ptot (mW) 600
006aaa999
400
200
0 −75
−25
25
75
125 175 Tamb (°C)
FR4 PCB, standard footprint
Fig 2. Power derating curve for SOT54 (SC-43A/TO-92)
.