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PBRN123E Dataheets PDF



Part Number PBRN123E
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description NPN 800 mA 40 V BISS RETs
Datasheet PBRN123E DatasheetPBRN123E Datasheet (PDF)

www.DataSheet4U.com PBRN123E series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 01 — 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Package NXP PBRN123EK PBRN123ES[1] PBRN123ET [1] Type number JEITA SC-59A SC-43A - JEDEC TO-236 TO-92 TO-236AB SOT346 SOT54 SOT23 Also available in SOT54A and SOT.

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www.DataSheet4U.com PBRN123E series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 01 — 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Package NXP PBRN123EK PBRN123ES[1] PBRN123ET [1] Type number JEITA SC-59A SC-43A - JEDEC TO-236 TO-92 TO-236AB SOT346 SOT54 SOT23 Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3 Applications I Digital application in automotive and industrial segments I Medium current peripheral driver I Switching loads 1.4 Quick reference data Table 2. Symbol VCEO IO Quick reference data Parameter collector-emitter voltage output current PBRN123EK, PBRN123ET PBRN123ES Conditions open base [1] Min - Typ - Max 40 600 800 Unit V mA mA www.DataSheet4U.com NXP Semiconductors PBRN123E series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ Quick reference data …continued Parameter repetitive peak output current PBRN123EK, PBRN123ET tp ≤ 1 ms; δ ≤ 0.33 1.54 0.9 2.2 1 800 2.86 1.1 mA kΩ bias resistor 1 (input) bias resistor ratio Conditions Min Typ Max Unit Table 2. Symbol IORM R1 R2/R1 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2. Pinning information Table 3. Pin SOT54 1 2 3 input (base) output (collector) GND (emitter) R1 Pinning Description Simplified outline Symbol 2 1 2 3 001aab347 006aaa145 1 R2 3 SOT54A 1 2 3 input (base) output (collector) GND (emitter) R1 2 1 2 3 001aab348 006aaa145 1 R2 3 SOT54 variant 1 2 3 input (base) output (collector) GND (emitter) R1 2 1 2 3 001aab447 006aaa145 1 R2 3 SOT23; SOT346 1 2 3 input (base) GND (emitter) output (collector) 1 2 006aaa144 sym007 3 R1 3 1 R2 2 PBRN123E_SER_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 27 February 2007 2 of 17 www.DataSheet4U.com NXP Semiconductors PBRN123E series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ 3. Ordering information Table 4. Ordering information Package Name PBRN123EK PBRN123ES[1] PBRN123ET [1] Type number Description plastic surface-mounted package; 3 leads Version SOT346 SC-59A SC-43A - plastic single-ended leaded (through hole) package; SOT54 3 leads plastic surface-mounted package; 3 leads SOT23 Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9). 4. Marking Table 5. Marking codes Marking code[1] G3 N123ES *7J Type number PBRN123EK PBRN123ES PBRN123ET [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO VI Parameter collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO output current PBRN123EK, PBRN123ET PBRN123ES IORM repetitive peak output current PBRN123EK, PBRN123ET tp ≤ 1 ms; δ ≤ 0.33 800 mA [1] [2][3] [1] Conditions open emitter open base open collector Min - Max 40 40 10 +22 −10 600 700 800 Unit V V V V V mA mA mA PBRN123E_SER_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 27 February 2007 3 of 17 www.DataSheet4U.com NXP Semiconductors PBRN123E series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter total power dissipation PBRN123EK, PBRN123ET Conditions Tamb ≤ 25 °C [1] [2] [3] Min −65 −65 Max 250 370 570 700 150 +150 +150 Unit mW mW mW mW °C °C °C PBRN123ES Tj Tamb Tstg [1] [2] [3] [1] junction temperature ambient temperature storage temperature Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint. 600 (1) 006aaa998 Ptot (mW) 400 (2) (3) 200 0 −75 −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves for SOT23 (TO-236AB) and SOT346 (SC-59A/TO-236) PBRN123E_SER_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 27 February 2007 4 of 17 www.DataSheet4U.com NXP Semiconductors PBRN123E series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ 800 Ptot (mW) 600 006aaa999 400 200 0 −75 −25 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint Fig 2. Power derating curve for SOT54 (SC-43A/TO-92) .


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